Direct observation of plasmon excitation in Si-SiO  2by γ-rays

Liu Changshi    Wu Guangming

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Direct observation of plasmon excitation in Si-SiO 2by γ-rays

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- Direct observation of plasmon excitation in Si-SiO 2by γ-rays
- NUCLEAR TECHNIQUES Issue 2, (1997)
- 作者机构：
  
  1. 新疆石油学院
  2. 北京理化分析测试中心
  3. 新疆石油学院北京理化分析测试中心
- 作者简介：
- 基金信息：
- DOI：
  CLC： TL622
- Published：01 February 1997
- 稿件说明：
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[1]刘昶时,武光明,陈萦,刘芬,赵汝权.Si-SiO_2及其在电离辐照下的等离激元[J].核技术,1997(02):28-31.

Liu Changshi Wu Guangming. Direct observation of plasmon excitation in Si-SiO 2by γ-rays[J]. Nuclear techniques, 1997, (2).
[1]刘昶时,武光明,陈萦,刘芬,赵汝权.Si-SiO_2及其在电离辐照下的等离激元[J].核技术,1997(02):28-31. DOI：

Liu Changshi Wu Guangming. Direct observation of plasmon excitation in Si-SiO 2by γ-rays[J]. Nuclear techniques, 1997, (2). DOI：

摘要

用ＸＰＳ分析技术对抗辐射加固与非加固的Ｓｉ－ＳｉＯ２进行了电离辐照前后Ｓｉ的一级等离激元（定位于Ｂ．Ｅ．１１６．９５ｅＶ）及ＳｉＯ２一级等离激元（定位于Ｂ．Ｅ．１２２．０ｅＶ）的研究。实验结果表明：存在一个由这两种等离激元组成的界面，在电离辐射的作用下，此界面区向ＳｉＯ２表面方向展宽，界面中心向ＳｉＯ２表面方向移动；两种Ｓｉ－ＳｉＯ２界面区中的ＳｉＯ２一级等离激元的浓度在正电场中辐照均随辐照剂量的增加而增加，而非加固样品中一级等离激元浓度在正电场中随辐照剂量的变化所产生的变动快于加固样品；在同一辐照剂量下加正电样品中等离激元浓度的变化远明显于不加电样品。

Abstract

The first level plasmons of Si （located at B.E.116.95eV） and SiO 2 （located at B.E.122.0eV） in radiation hard and Si-SiO 2were investigated by XPS before and after 60 Co irradiation. The experimental results indicate that the interface consisting of the two plasmons extends toward the surface of SiO 2

and the centre of the interface moves toward the surface of SiO 2 after the irradiation. The concentration of plasmons depends on radiation dose

irradiation bias field and the growth process of Si-SiO 2.

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