Temperature effect of pMOS dosimeters and its compensation

Fan Long    Ren Diyuan    Gao Wenyu    Guo Qi    Yan Rongliang

您当前的位置：

首页 >

文章列表页 >

Temperature effect of pMOS dosimeters and its compensation

更新时间：2021-04-09

- Temperature effect of pMOS dosimeters and its compensation
- NUCLEAR TECHNIQUES Issue 3, (1997)
- 作者机构：
  
  1. 中国科学院新疆物理研究所
  2. 骊山微电子公司
  3. 中国科学院新疆物理研究所骊山微电子公司
- 作者简介：
- 基金信息：
- DOI：
  CLC： TL818
- Published：01 March 1997
- 稿件说明：
移动端阅览
[1]范隆,任迪远,高文钰,郭旗,严荣良,赵元富.pMOS剂量计的温度效应及其补偿探讨[J].核技术,1997(03):46-51.

Fan Long Ren Diyuan Gao Wenyu Guo Qi Yan Rongliang. Temperature effect of pMOS dosimeters and its compensation[J]. Nuclear techniques, 1997, (3).
[1]范隆,任迪远,高文钰,郭旗,严荣良,赵元富.pMOS剂量计的温度效应及其补偿探讨[J].核技术,1997(03):46-51. DOI：

Fan Long Ren Diyuan Gao Wenyu Guo Qi Yan Rongliang. Temperature effect of pMOS dosimeters and its compensation[J]. Nuclear techniques, 1997, (3). DOI：

摘要

利用恒流注入法和Ｉ－Ｖ测试方法研究了用于ｐＭＯＳ剂量计的国产ｐＭＯＳＲＡＤＦＥＴ的温度效应，结合ＭＯＳ晶体管阈值和电流－电压方程的理论公式推导分析了温度对阈电压、沟道载流子迁移率的影响，对“零温度系数点”从理论上进行了讨论，探讨了辐照对“零温度系数点”的影响。实验结果表明，采用“零温度系数”电流作为注入的恒流来测量栅源电压能提高剂量计电压读出的精度，起到对温度补偿的作用。

Abstract

An investigation on temperature effect of the home-made pMOS RADFETs used in dosimeters has been carried out. Based on the theoretical formulas of MOS transistor threshold voltage and the I DS - V GS equation

the temperature effects on threshold voltage and channel carrier mobility are discussed. And the influence of irradiation on the “zero temperature coefficient（ZTC） point” is explored. The experimental results show that biasing a pMOS dosimeter at ZTC point （constant current） to measure the gate-source voltage can improve the read-out precision of the dosimeter and make compensation for the temperature effect.

关键词

Keywords

references

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Study of the low voltage power module for SiPM

Temperature characteristic of LuAG scintillation detector for deep-well logging

Calibration of pMOS dosimeter at VT irradiation mode

A precision constant acceleration Mössbauer spectrometer

Related Author

CHEN Pengyu

MA Lishuang

QIAN Sen

ZHU Yao

GAO Feng

WANG Yang

WANG Zhigang

NING Zhe

Related Institution

North China University of Technology

Institute of High Energy Physics, Chinese Academy of Sciences

State Key Laboratory of Particle Detection and Electronics

Harbin Institute of Technology

RWTH Aachen University

AI问答

Address：2019 Jialuo Road, Jiading, Shanghai, China Postal code：201800
Tel：021-39194977 Email：LHB@sinap.ac.cn
Technical support is provided by Beijing Founder electronics co., LTD 沪ICP备05005479号-1 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.
Total Visits：880840 Visits Today：367

⁰