Dose distributions of γ rays in silicon at and near interfaces between silicon and various materials

Ba Weizhen    Wu Qinzhi    He Chengfa    Chen Chaoyang

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Dose distributions of γ rays in silicon at and near interfaces between silicon and various materials

更新时间：2021-04-09

- Dose distributions of γ rays in silicon at and near interfaces between silicon and various materials
- NUCLEAR TECHNIQUES Issue 7, (1997)
- 作者机构：
  
  中国科学院新疆物理研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC： TL816.2
- Published：01 July 1997
- 稿件说明：
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[1]巴维真,吾勤之,何承发,陈朝阳.γ 射线在硅界面附近的剂量分布[J].核技术,1997(07):21-24.

Ba Weizhen Wu Qinzhi He Chengfa Chen Chaoyang. Dose distributions of γ rays in silicon at and near interfaces between silicon and various materials[J]. Nuclear techniques, 1997, (7).
[1]巴维真,吾勤之,何承发,陈朝阳.γ 射线在硅界面附近的剂量分布[J].核技术,1997(07):21-24. DOI：

Ba Weizhen Wu Qinzhi He Chengfa Chen Chaoyang. Dose distributions of γ rays in silicon at and near interfaces between silicon and various materials[J]. Nuclear techniques, 1997, (7). DOI：

摘要

研究了金、钨等多种材料与硅交界时６０Ｃｏγ射线在界面硅一侧产生的深度剂量分布。将该分布与均匀硅材料中的平衡剂量比较，发现在界面附近具有明显的剂量梯度分布。特别在金等高原子序数材料与硅交界的情况下，硅界面的剂量有显著增强现象。以康普顿散射、光电、俄歇效应和次级电子的输运机制为基础，用半径验电子输运方程对界面附近的剂量梯度分布进行了计算，得到了与实验符合较好的结果。

Abstract

The dose gradient distributions of 60 Co γ rays in silicon at and near the interfaces between silicon and various materials were measured In the case of silicon adjacent to a high atomic number material

a dose enhancement effect was observed at the interface Dose gradient distributions were also calculated with a semiempirical electron transport equation based on the mechanisms of the Compton

photoelectric and Auger effects of γ-rays and secondary-electron transportation Good agreement was obtained between experimental and calculated results

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李晓勤

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邹世昌

巴维真

吾勤之

何承发

Related Institution

Shanghai Institute of Metallurgy,Academia Sinica,shanghai 200050)Hemment P..F

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