Dose enhancement effects of X-ray radiation in CMOS circuits

Chen Panxun    Zhou Kaiming

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Dose enhancement effects of X-ray radiation in CMOS circuits

更新时间：2021-04-09

- Dose enhancement effects of X-ray radiation in CMOS circuits
- NUCLEAR TECHNIQUES Issue 7, (1997)
- 作者机构：
  
  中国工程物理研究院应用电子学研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC： TL271.7
- Published：01 July 1997
- 稿件说明：
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[1]陈盘训,周开明.CMOS 电路 X 射线辐射剂量增强效应[J].核技术,1997(07):8-11.

Chen Panxun Zhou Kaiming. Dose enhancement effects of X-ray radiation in CMOS circuits[J]. Nuclear techniques, 1997, (7).
[1]陈盘训,周开明.CMOS 电路 X 射线辐射剂量增强效应[J].核技术,1997(07):8-11. DOI：

Chen Panxun Zhou Kaiming. Dose enhancement effects of X-ray radiation in CMOS circuits[J]. Nuclear techniques, 1997, (7). DOI：

摘要

研究了ＣＭＯＳ电路在Ｘ射线辐射环境下性能的退化及剂量增强效应，测量了相对剂量增强系数。对不同工艺ＣＭＯＳ电路的剂量增强系数进行了比较，并对高原子序数材料的Ｘ射线剂量增强机理进行了讨论。

Abstract

The performance degradation and dose enhancement effects of CMOS circuits in an X-ray radiation environment are presented The relative dose enhancement factors （RDEF） are measured and the RDEF of CMOS manufactured in different technological conditions are compared The mechanism of X-ray dose enhancement for the material with higher atomic number is discussed

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