A study of 6H α-SiC implanted with Ag ions in MEVVA ion source

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A study of 6H α-SiC implanted with Ag ions in MEVVA ion source

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- A study of 6H α-SiC implanted with Ag ions in MEVVA ion source
- NUCLEAR TECHNIQUES Issue 4, (1996)
- 作者机构：
  
  清华大学
- 作者简介：
- 基金信息：
- DOI：
  CLC： O742
- Published：01 April 1996
- 稿件说明：
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[1]汪泓宏,卢东晖,刘正昕.在MEVVA源中银离子注入单晶6Hα—SiC的研究[J].核技术,1996(04):193-198.

A study of 6H α-SiC implanted with Ag ions in MEVVA ion source[J]. Nuclear techniques, 1996, (4).
[1]汪泓宏,卢东晖,刘正昕.在MEVVA源中银离子注入单晶6Hα—SiC的研究[J].核技术,1996(04):193-198. DOI：

A study of 6H α-SiC implanted with Ag ions in MEVVA ion source[J]. Nuclear techniques, 1996, (4). DOI：

摘要

室温下在５０ｋＶ电压的ＭＥＶＶＡ离子源中用不同剂量的银离子注入到单晶６Ｈａ－ＳｉＣ中，对未注入和注入的ＳｉＣ样品进行了显微硬度和压坑的扫描电子显微镜观察，并研究了其拉曼谱、卢瑟福背散射谱和Ｘ光电子能谱等。硬度、拉曼谱和ＳＥＭ试验综合说明Ａｇ＋注入使ＳｉＣ晶体由脆性状态转变成韧性状态，在ＳｉＣ样品上已形成一层非晶态层，非晶态形成的最低剂量约为１０１４－１０１５Ａｇ＋／ｃｍ２。注入５×１０１６Ａｇ＋／ｃｍ２的Ａｇ３ｄ５／２峰的ＸＰＳ谱说明在ＳｉＣ的注入层中，Ａｇ以金属状态存在。根据ＭＥＶＶＡ离子源产生多电荷态银离子的特点，讨论了本实验研究的结果，并与文献的结果进行了比较。

Abstract

amples of the 6H a-SiC crystal have been implanted with a variety of doses of silver ions from a MEVVA ion source at 50 kV potential and room temperature.Tests including microhardness measurements

SEM of indentations

Raman spectrography

RBS and XPS were carried out. The results indicate that the SiC crystal is changed from a brittle state into a ductile one by Ag ion implantation and an amorphous layer is formed at the surface of the implanted a-SiC sample. The lowest dose for the formation of amorphous state is about 1014-1015 Ag+/cm2. XPS of Ag3d5/2 for the sample implanted with 5 × 1016Ag+/cm2 shows that in the implanted layer of SiC

silver exists in a metallic state. According to the features of the MEVVA ion source which produces multiple charged silver ions

the present results are discussed and compared with those from literatures.

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