Surface modification of alumina by nitrogen ion implantation

您当前的位置：

首页 >

文章列表页 >

Surface modification of alumina by nitrogen ion implantation

更新时间：2021-04-09

- Surface modification of alumina by nitrogen ion implantation
- NUCLEAR TECHNIQUES Issue 2, (1996)
- 作者机构：
  
  1. 兰州大学
  2. 中国建筑材料科学研究院
  3. 中国科学院兰州化学物理研究所
  4. 兰州大学中国建筑材料科学研究院中国科学院兰州化学物理研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC： TB321
- Published：01 February 1996
- 稿件说明：
移动端阅览
[1]王齐祖,陈玉峰,田军,杨晓鸿,王志宏.离子注入α－Al_2O_3陶瓷材料的表面改性研究[J].核技术,1996(02):75-79.

Surface modification of alumina by nitrogen ion implantation[J]. Nuclear techniques, 1996, (2).
[1]王齐祖,陈玉峰,田军,杨晓鸿,王志宏.离子注入α－Al_2O_3陶瓷材料的表面改性研究[J].核技术,1996(02):75-79. DOI：

Surface modification of alumina by nitrogen ion implantation[J]. Nuclear techniques, 1996, (2). DOI：

摘要

研究了α－Ａｌ２Ｏ３单晶注入Ｎ＋后的力学性能变化。结果表明，注入剂量为１×１０１７Ｎ＋／ｃｍ２时，Ａｌ２Ｏ３的显微硬度提高了９２％；注入剂量为３×１０１７Ｎ＋／ｃｍ２时，在Ａｌ２Ｏ３表面形成非晶层，导致表面软化，显微硬度只是基体的５０％左右．离子注入在样品表面产生了高达￣１１５０ＭＰａ的压应力，材料的断裂韧性的改善与此有关，实验亦发现Ｎ＋离子注入后Ａｌ２Ｏ３的断裂韧性提高了９５％左右．ＳＥＭ分析同样证明Ｎ＋注入ａ－Ａｌ２Ｏ３后，其表面力学性能确实有所改善。

Abstract

The effect of 110keV nitrogen ion implantation on hardness

fracture toughness and residual stress of the single crystal alumina has been investigated.It is shown that

ocrphardness increases by 92% for a fluence of 1×1017N+/cm2 and fracture toughness increases by 95% for a fluence of 3×1017N+/cm2.

关键词

Keywords

references

Views

130

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Surface modification of sapphire implanted with high dose yttrium and platinum ions

Surface modification of sapphire implanted with indium ions

MEVVA ion source and its application

The surface modification of ceramics by ion implantation and ion beam mixing

A dual-purpose machine of ion implantation and ion beam mixing

Related Author

谢东珠

朱德彰

潘浩昌

曹德新

徐洪杰

谢东珠

朱德彰

曹建清

Related Institution

Laboratory of Nuclear Analysis Techniques, Shanghai Institute of Nuclear Research, the Chinese Academy of Sciences

Shanghai Institute of Nuclear Research, the Chinese Academy of Sciences

National Laboratory of Materials Modification by Laser, Ion and Electron Beams,Dalian University of Technology, Delian

Lanzhou University, Lanzhou 730000)Chen Yufeng

AI问答

Address：2019 Jialuo Road, Jiading, Shanghai, China Postal code：201800
Tel：021-39194977 Email：LHB@sinap.ac.cn
Technical support is provided by Beijing Founder electronics co., LTD 沪ICP备05005479号-1 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.
Total Visits：880780 Visits Today：307

⁰