Radiation effects of protons on the bipolar operational amplifier

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Radiation effects of protons on the bipolar operational amplifier

更新时间：2021-04-09

- Radiation effects of protons on the bipolar operational amplifier
- NUCLEAR TECHNIQUES Issue 1, (1996)
- 作者机构：
  
  中国科学院新疆物理研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN722.77
- Published：01 January 1996
- 稿件说明：
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[1]陆妩,任迪远,余学锋,张国强,郭旗,严荣良.双极运算放大器的质子辐照效应[J].核技术,1996(01):30-34.

Radiation effects of protons on the bipolar operational amplifier[J]. Nuclear techniques, 1996, (1).
[1]陆妩,任迪远,余学锋,张国强,郭旗,严荣良.双极运算放大器的质子辐照效应[J].核技术,1996(01):30-34. DOI：

Radiation effects of protons on the bipolar operational amplifier[J]. Nuclear techniques, 1996, (1). DOI：

摘要

研究了ＯＰ－０７双极运算放大器在８ＭｅＶ、１２ＭｅＶ两种能量下的质子辐照效应及损伤特性，并通过对电路内部的损伤分析，探讨了各敏感参数的变化规律．结果表明，由位移损伤和电离辐射损伤引起的晶体管增益衰降是导致运算放大器各参数变化的主要原因．１２ＭｅＶ质子与８ＭｅＶ质子的损伤试验结果表明了质子的辐照效应大小与入射质子的通量和能量成正比．

Abstract

The radiation effects and damage properties of bipolar operational amplifier OP-07 exposed to protons with energies of 12 MeV and 8MeV are investigated. It is shown that the gain reduction of transistors in the circuit is the primary reason for the degradation of the device due to both displacement damage and ionizing damage

and the effects are proportional to flux and energy of the incident protons.

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