A study on interaction Of rare-earth element impurity with neutron irradiation  defects in Si

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A study on interaction Of rare-earth element impurity with neutron irradiation defects in Si

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- A study on interaction Of rare-earth element impurity with neutron irradiation defects in Si
- NUCLEAR TECHNIQUES Issue 6, (1996)
- 作者机构：
  
  兰州大学
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN304.12
- Published：01 June 1996
- 稿件说明：
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[1]贾文宝,苏桐龄.半导体Si中稀土元素杂质与中子辐照缺陷的互作用研究[J].核技术,1996(06):349-352.

A study on interaction Of rare-earth element impurity with neutron irradiation defects in Si[J]. Nuclear techniques, 1996, (6).
[1]贾文宝,苏桐龄.半导体Si中稀土元素杂质与中子辐照缺陷的互作用研究[J].核技术,1996(06):349-352. DOI：

A study on interaction Of rare-earth element impurity with neutron irradiation defects in Si[J]. Nuclear techniques, 1996, (6). DOI：

摘要

用１４ＭｅＶ中子辐照掺有稀土元素杂质及未掺稀土元素杂质的ｎ型Ｓｉ，并用红外吸收谱仪和四探针法测量其参数在辐照前后的变化。红外吸收谱测量表明，在单晶硅中的杂质未形成新的自身成份的红外吸收峰，但电阻率测量表明，掺入稀土元素Ｅｒ和Ｇｄ的Ｓｉ电阻率虽都随着中子注入量的增大而增大，但Ｓｉ（Ｅ）和Ｓｉ（Ｇｄ）的电阻率比率的变化远远小于Ｓｉ的变化。

Abstract

The parallel measurements were carried out on the n-type Si single crystal and the n-type Si single crystal doped with Er and Gd.All these crystals were irradiated with 14MeV neutrons. The measurementS of resistivity were made

and the infrared absorption spectra were recorded using a Nicolet 170SX FT-IR spectrophotometer.No new infrared absorption peaks of the rare-earth elements in Si were observed after irradiation.However

the measurements of resistivity indicated much smaller changes of resistivity ratio in Si（Er）or Si（Gd）than that in Si.

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