Study of doped InP by positron annihilation lifetime technique

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Study of doped InP by positron annihilation lifetime technique

更新时间：2021-04-09

- Study of doped InP by positron annihilation lifetime technique
- NUCLEAR TECHNIQUES Issue 7, (1996)
- 作者机构：
  
  1. 中国科学院高能物理研究所
  2. 电子工业部第十三研究所
  3. 中国科学院高能物理研究所电子工业部第十三研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN304
- Published：01 July 1996
- 稿件说明：
移动端阅览
[1]黄懋容,王蕴玉,杨巨华,韩玉杰,孙同年.用正电子湮没寿命技术研究掺杂的InP[J].核技术,1996(07):395-398.

Study of doped InP by positron annihilation lifetime technique[J]. Nuclear techniques, 1996, (7).
[1]黄懋容,王蕴玉,杨巨华,韩玉杰,孙同年.用正电子湮没寿命技术研究掺杂的InP[J].核技术,1996(07):395-398. DOI：

Study of doped InP by positron annihilation lifetime technique[J]. Nuclear techniques, 1996, (7). DOI：

摘要

用正电子湮没寿命研究了多掺杂和单掺杂Ｓｎ的ＩｎＰ在不同载流子浓度、电导率和位错密度下空位浓度的变化。

Abstract

The variations of vacancy concentration with carrier concentration

conductivity and dislocation density were studied by the positron annihilation lifetime technique for the InP samples doped with both multiimpurities and single Sn.

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