Profiling of oxygen in silicon by coincident elastic recoil detection

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Profiling of oxygen in silicon by coincident elastic recoil detection

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- Profiling of oxygen in silicon by coincident elastic recoil detection
- NUCLEAR TECHNIQUES Issue 9, (1995)
- 作者机构：
  
  北京大学重离子物理研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN304.12
- Published：01 September 1995
- 稿件说明：
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[1]韩建伟,韦伦存,梁斌,钟运成.用符合弹性前冲法测量硅中的氧含量及其分布[J].核技术,1995(09):535-537.

Profiling of oxygen in silicon by coincident elastic recoil detection[J]. Nuclear techniques, 1995, (9).
[1]韩建伟,韦伦存,梁斌,钟运成.用符合弹性前冲法测量硅中的氧含量及其分布[J].核技术,1995(09):535-537. DOI：

Profiling of oxygen in silicon by coincident elastic recoil detection[J]. Nuclear techniques, 1995, (9). DOI：

摘要

采用２７ＭｅＶ的１２Ｃ５＋作为入射粒子，采用符合弹性前冲方法测量了５．６μｍ的硅样品中氧的含量及其深度分布．实验结果表明，采用１２Ｃ与１６Ｏ符合弹性前冲方法分析硅样品中的氧，其最小探测限可达２０×１０－６（原子比），深度分辨率为～４５０ｎｍ．该方法对于厚样品，尤其比常规弹性前冲优越。

Abstract

A coincident elastic recoil detection method for oxygen Profiling in silicon isdescribed. By using 12C as the incident particles

12C and 16O from the same collision event are detected respectively in coincidence. From the obtained 16O energy spectrum

oxygen profile in the sample can be calculated. 27MeV 12C5+ particles are used and oxygen profile in 5.6μm silicon is measured.The results show that this method has a detection limit of about 20×10-6 （atomic）and a depth resolution of about 450nm in 5.6μm silicon. It is specially useful for profiling light elements in samples of about several microns.

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Resistivity and damage annealing of high energy（MeV） oxygen ion implanted semi-insulating GaAs

Related Author

韦伦存

丁富荣

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Peking University

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