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1. 北京师范大学低能核物理研究所
2. 北京有色金属研究总院
3. 北京师范大学低能核物理研究所北京有色金属研究总院
Published:01 September 1995
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[1]吴瑜光,张通和,孙贵如.高能磷离子注入硅晶格的损伤初探[J].核技术,1995(09):522-526.
A Study of lattice damage by MeV P ion implantation in Si[J]. Nuclear techniques, 1995, (9).
[1]吴瑜光,张通和,孙贵如.高能磷离子注入硅晶格的损伤初探[J].核技术,1995(09):522-526. DOI:
A Study of lattice damage by MeV P ion implantation in Si[J]. Nuclear techniques, 1995, (9). DOI:
对高能磷离子注入硅、低剂量迭加注入硅,高能低能双注入硅中引起的晶格损伤、二次缺陷形成及退火效应进行了初步探讨。
A preliminary investigation of lattice damage
secondary defect formation and annealing effects has been carried out for high energy multiple P ion implantation and high and low energy dual implantation in Si.
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