Electron beam backscattering effect in multilayer materials

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Electron beam backscattering effect in multilayer materials

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- Electron beam backscattering effect in multilayer materials
- NUCLEAR TECHNIQUES Issue 3, (1995)
- 作者机构：
  
  上海科技大学
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN101
- Published：01 March 1995
- 稿件说明：
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[1]王传珊,周树鑫,罗文芸,许梦杰,陆裕清.电子束在多层材料中的背散射效应[J].核技术,1995(03):166-169.

Electron beam backscattering effect in multilayer materials[J]. Nuclear techniques, 1995, (3).
[1]王传珊,周树鑫,罗文芸,许梦杰,陆裕清.电子束在多层材料中的背散射效应[J].核技术,1995(03):166-169. DOI：

Electron beam backscattering effect in multilayer materials[J]. Nuclear techniques, 1995, (3). DOI：

摘要

研究基于简单解析表达式的电子背散射系数与入射电子能量、介质厚度和能损的关系及其对电子束辐射加工的影响。考虑到入射电子在多层介质之间反复的穿透和背散射，编制了ＥＤ４１０程序，计算了不同衬底材料和不同入射电子能量下能量沉积的深度分布和剂量因子。利用衬底材料的背散射抬高接近衬底界面处的剂量，较大地改善了辐射加工的均匀性。

Abstract

The dependence of electron backscattering coefficient upon incident electron energy

material thickness and energy loss was reviewed. Effect of electron backscattering coefficient on electron processing was also described. Based on multi-pened.ation and multi-backscattering of incident electrons in multilayer materials

a program ED410 has been proposed for calculating the depth distribution of electron energy deposition and the dose factor in different substracte materials for different incident energy. By using a substrate and its backscattering effect

irradiation uniformity in electron processing can be improved greatly.

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