Determination of impurity Ge in silicon crystal by SRXRF  using fundamental parameter method

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Determination of impurity Ge in silicon crystal by SRXRF using fundamental parameter method

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- Determination of impurity Ge in silicon crystal by SRXRF using fundamental parameter method
- NUCLEAR TECHNIQUES Issue 4, (1995)
- 作者机构：
  
  中国科学院高能物理研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC： O571.436
- Published：01 April 1995
- 稿件说明：
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[1]吴强,刘亚雯,魏成连.用同步辐射XRF和基本参数法分析[J].核技术,1995(04):224-226.

Determination of impurity Ge in silicon crystal by SRXRF using fundamental parameter method[J]. Nuclear techniques, 1995, (4).
[1]吴强,刘亚雯,魏成连.用同步辐射XRF和基本参数法分析[J].核技术,1995(04):224-226. DOI：

Determination of impurity Ge in silicon crystal by SRXRF using fundamental parameter method[J]. Nuclear techniques, 1995, (4). DOI：

摘要

利用同步辐射Ｘ荧光分析技术，采用基本参数法，定量分析了单晶硅中掺杂元素Ｇｅ的含量。程序用标样进行了检验，误差小于１２％．

Abstract

The concentration of impurity Ge on the cross section of silicon crystal was determined by synchrotron radiation-excited X-ray fluorescence analysis using a fundamental parameter method. The accuracy of the program was ascertained by analyzing standard samples. The relative error is less than 12%.

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