Diffusion of positrons to surface of semiconductors

您当前的位置：

首页 >

文章列表页 >

Diffusion of positrons to surface of semiconductors

更新时间：2021-04-09

- Diffusion of positrons to surface of semiconductors
- NUCLEAR TECHNIQUES Issue 4, (1995)
- 作者机构：
  
  1. 中国科学院金属研究所
  2. 中国科学院国际材料物理中心
  3. 中国科学院金属研究所中国科学院国际材料物理中心
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN304.054
- Published：01 April 1995
- 稿件说明：
移动端阅览
[1]姜健,周新章,朱洁,龙期威.半导体中正电子向表面的扩散[J].核技术,1995(04):199-202.

Diffusion of positrons to surface of semiconductors[J]. Nuclear techniques, 1995, (4).
[1]姜健,周新章,朱洁,龙期威.半导体中正电子向表面的扩散[J].核技术,1995(04):199-202. DOI：

Diffusion of positrons to surface of semiconductors[J]. Nuclear techniques, 1995, (4). DOI：

摘要

考虑到半导体中内电场的存在对半无限介质和有限厚度薄膜中的正电子扩散过程，在各种边界条件下，利用δ函数法计算了正电子向表面扩散分数。这些结果为半导体多层复合结构中的慢正电子束实验结果的分析提供了理论基础。

Abstract

In this paper a theoretical study of diffusion of positrons to the surface of semiconductors with an internal electric field was reported. For the semi-infinite medium

by using a radiative boundary condition and δ-function method

the fraction of positrons diffusing back to the surface was calculated. The results are of universal significance. For the film with a thickness d

the fractions of positrons diffusing to the surfaces at x=0 and x=d under an absorbing boundary condition were also calculated with the same method. As d approaches infinity

in both cases of implantation profiles

solutions of the positron diffusion equation for the semi-infinite medium can be obtained. The results can be used to the analysis of experimental data for the overlayer/substrate system which contains one film or leveral films and a semi-infinite medium.

关键词

Keywords

references

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Preliminary study on characteristic X-ray yields of the thick-targe impacted by low-energy positron

Investigation on the preparation, structure and mechanical properties of a Zr-based nuclear material

D-D neutron irradiation effects on single-crystal TiO₂

Photoinitiated crosslinking polyethylene studied by positron annihilation technique

Photoelectron diffraction studies on semiconductor surface structure in NSRL

Related Author

FANG Bingbing

HANG Zhongbin

CAO Xingzhong

TIAN Lixia

郭古青

孟祥飞

戈涛

黄才龙

Related Institution

The Engineering & Technical College of Chengdu University of Technology

School of Nuclear Science and Engineering, East China University of Technology

College of Material Science and Technology, Nanjing University of Aeronautics and Astronautics

School of Nuclear Science and Technology,Lanzhou University,Lanzhou 730000,China) 2

山东大学晶体材料国家重点实验室

AI问答

Address：2019 Jialuo Road, Jiading, Shanghai, China Postal code：201800
Tel：021-39194977 Email：LHB@sinap.ac.cn
Technical support is provided by Beijing Founder electronics co., LTD 沪ICP备05005479号-1 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.
Total Visits：880780 Visits Today：307

⁰