Anomalous damage behaviour Of BF<sub>2</sub>￣+ implantation in silicon

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Anomalous damage behaviour Of BF₂￣+ implantation in silicon

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- Anomalous damage behaviour Of BF₂￣+ implantation in silicon
- NUCLEAR TECHNIQUES Issue 12, (1995)
- 作者机构：
  
  中国科学院上海冶金研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC： R142
- Published：01 December 1995
- 稿件说明：
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[1]林成鲁,李晓勤,周祖尧,杨根庆,邹世昌.硅中注入BF_2~＋辐射损伤的反常行为[J].核技术,1995(12):705-710.

Anomalous damage behaviour Of BF₂￣+ implantation in silicon[J]. Nuclear techniques, 1995, (12).
[1]林成鲁,李晓勤,周祖尧,杨根庆,邹世昌.硅中注入BF_2~＋辐射损伤的反常行为[J].核技术,1995(12):705-710. DOI：

Anomalous damage behaviour Of BF₂￣+ implantation in silicon[J]. Nuclear techniques, 1995, (12). DOI：

摘要

借助离子束背散射和沟道技术结合透射电子显微镜分析，研究了在３００Ｋ和７７Ｋ下硅中注入ＢＦ２＋辐射损伤的反常行为．结果发现ＢＦ２＋注入在硅中产生的损伤层或无定形层情况区别于其它较重离子（质量数≥２７Ａｌ＋）注入．在３００Ｋ下注入时，硅中引入的两个损伤峰，其中一个位于离子入射的平均投影射程附近，另一个则在近表面；在７７Ｋ下注入时，硅中引入的损伤层或无定形层首先出现在近表面，随注入剂量的增加，无定形层向硅体内延伸。

Abstract

The anomalous damage behaviour of BF2+ implantation into silicon at 300K and 77K has been investigated by using grazing angle Rutherford backscattering and channeling in combination with transmission electron microscopy.The damage or the amorphous layer produced by BF2+ implantation is different from that produced by other heavier ions（>27Al+）. For BF2+ implantation at 300K

there are two damage peaks

one at a depth near the projectile range of the ions and the other at the near surface

while for BF2+ implantation at 77K

the damage or the amorphous layer first occurs at the surface and is then extended to the bulk of silicon with increasing dose.

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Anomalous damage behaviour Of BF2￣+ implantation in silicon

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摘要

Abstract

关键词

Keywords

references

Anomalous damage behaviour Of BF₂￣+ implantation in silicon