Electron-beam irradiation technology for decreasing the h<sub>FE</sub> value of transistors

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Electron-beam irradiation technology for decreasing the h_FE value of transistors

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- Electron-beam irradiation technology for decreasing the h_FE value of transistors
- NUCLEAR TECHNIQUES Issue 4, (1994)
- 作者机构：
  
  1. 浙江省技术物理应用研究所
  2. 浙江省广播电视工业公司
  3. 浙江省技术物理应用研究所浙江省广播电视工业公司
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN32
- Published：01 April 1994
- 稿件说明：
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[1]王中央,陈祖良,刘亚建,章月红,陈祖林,施建青,傅建新,尹南勇.降低晶体管h_（FE）值的电子束辐照工艺的研究[J].核技术,1994(04):252-256.

Electron-beam irradiation technology for decreasing the h_FE value of transistors[J]. Nuclear techniques, 1994, (4).
[1]王中央,陈祖良,刘亚建,章月红,陈祖林,施建青,傅建新,尹南勇.降低晶体管h_（FE）值的电子束辐照工艺的研究[J].核技术,1994(04):252-256. DOI：

Electron-beam irradiation technology for decreasing the h_FE value of transistors[J]. Nuclear techniques, 1994, (4). DOI：

摘要

研究了辐照剂量、剂量率、退火温度、退火时间、辐照方法等因素对晶体管ｈＦＥ值（电流放大倍数）的影响。结果表明，电子束辐照能有效地降低晶体管ｈＦＥ值，并能通过退火处理使其稳定。

Abstract

Relationships between the hFE value of transistors and irradiation dose

dose rate

annealing temperature

annealing time and irradiation methods are studied. The results show that the hFE value can be decreased effectively by elctron beam irradiation and be stabilized by annealing treatment.

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Electron-beam irradiation technology for decreasing the hFE value of transistors

DOI：

摘要

Abstract

关键词

Keywords

references

Electron-beam irradiation technology for decreasing the h_FE value of transistors