The ionizing radiation response of two fluorinated gate dielectrics has been compared. It is shown that the F implanted gate oxides for H2+O2 oxidation have stronger ability of suppressing radiation-induced oxide charges and interface states than that for dry O2 oxidation. The experimental results are explained with a model

in which the Si-F bonds are taken as a substitute for other stress bonds that is easy to form charge traps under irradiation and some existing differences are considered between two gate oxides in term of the number of electron traps and defects as well as the hole mobilities.