Growth of metallic compounds during the pulsed Ti or Mo ion implantation into steel and Al is studied experimentally and theoretically. The relation of the compound growth law with target temperature rise is given. A comparison of the results of pulsed ion implantation with the in situ TEM observation shows that the growth temperature during implantation （400℃ ） is much lower than that during annealing（600℃ ）

which indicates that the flux of vacancies and interstitials can promote the growth of metallic compounds. More than ten kinds of the compounds have been obtained using MEVVA ion implantation. Because the compounds are formed in the implanted layer

hardness of the implanted layer increases and the wear property is umproved.