Unusual annealing behavior of 1.56 MeV Sb￣+ ion implanted single-crystal silicon

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Unusual annealing behavior of 1.56 MeV Sb￣+ ion implanted single-crystal silicon

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- Unusual annealing behavior of 1.56 MeV Sb￣+ ion implanted single-crystal silicon
- NUCLEAR TECHNIQUES Issue 1, (1994)
- 作者机构：
  
  1. 中国科学院新疆物理研究所
  2. 中国科学院上海原子核研究所
  3. 中国科学院上海冶金研究所
  4. 上海复旦大学
  5. 中国科学院新疆物理研究所中国科学院上海原子核研究所中国科学院上海冶金研究所上海复旦大学
- 作者简介：
- 基金信息：
- DOI：
  CLC： TG156.2
- Published：01 January 1994
- 稿件说明：
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[1]高剑侠,朱德彰,曹德新,周祖尧,赵国庆.1．56MeV　Sb~＋注入单晶硅的反常退火行为[J].核技术,1994(01):1-6.

Unusual annealing behavior of 1.56 MeV Sb￣+ ion implanted single-crystal silicon[J]. Nuclear techniques, 1994, (1).
[1]高剑侠,朱德彰,曹德新,周祖尧,赵国庆.1．56MeV　Sb~＋注入单晶硅的反常退火行为[J].核技术,1994(01):1-6. DOI：

Unusual annealing behavior of 1.56 MeV Sb￣+ ion implanted single-crystal silicon[J]. Nuclear techniques, 1994, (1). DOI：

摘要

剂量为２×１０（１３）－５×１０（１５）ｃｍ（－２）的１．５６ＭｅＶＳｂ＋注入Ｓｉ（１００）后，向石英炉中通入流动纯Ａｒ气进行热退火（退火温度为５００一１０５０℃，时间为３０ｍｉｎ）。采用３ＭｅＶＨｅ（２＋）卢瑟福背散射／沟道技术和透射电镜技术测量样品的注人损伤以及退火特性，结合计算机模拟数据，结果表明：缺陷的产生类型与注入离子的剂量、样品退火温度密切相关。

Abstract

The damage and annealing behavior of 1.56 MeV Sb+ ion implanted Si（100） have been studied. The dose range of implantation was 2 × 1013-5 × 1015 Sb+/cm2. The samples were annealed for 30 minutes in flowing Ar gas at temperatures ranging from 500 to 1050 ℃ in a conventional furnace tube. The implantation-induced damage and annealing quality of the samples were measured with 3 MeV He+ RBS/channeling and TEM techniques. In addition

a computer simulation of ion implantation damage has been performed with TRIM program. It is concluded that the category of defects is related to ion dose and annealing temperature of samples.

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Zhou Zuyao

State Key Laboratory of Particle Detection and Electronics, University of Science and Technology of China

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