Resistivity and damage annealing of high energy（MeV） oxygen ion implanted semi-insulating GaAs

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Resistivity and damage annealing of high energy（MeV） oxygen ion implanted semi-insulating GaAs

更新时间：2021-04-09

- Resistivity and damage annealing of high energy（MeV） oxygen ion implanted semi-insulating GaAs
- NUCLEAR TECHNIQUES Issue 3, (1994)
- 作者机构：
  
  北京大学
- 作者简介：
- 基金信息：
- DOI：
  CLC： TG156.2
- Published：01 March 1994
- 稿件说明：
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[1]韦伦存,丁富荣.高能（MeV级）氧离子注入本征型GaAs的电性能及注入损伤退火行为的研究[J].核技术,1994(03):140-144.

Resistivity and damage annealing of high energy（MeV） oxygen ion implanted semi-insulating GaAs[J]. Nuclear techniques, 1994, (3).
[1]韦伦存,丁富荣.高能（MeV级）氧离子注入本征型GaAs的电性能及注入损伤退火行为的研究[J].核技术,1994(03):140-144. DOI：

Resistivity and damage annealing of high energy（MeV） oxygen ion implanted semi-insulating GaAs[J]. Nuclear techniques, 1994, (3). DOI：

摘要

在本征型ＧａＡｓ中注入２．０ＭｅＶ（剂量１．０×１０１５／ｃｍ２）＋２．９ＭｅＶ（剂量１．１×１０１５／ｃｍ２）的１６Ｏ，使氧在约１．５—２．５μｍ之间形成均匀分布。注入样品分别经４００—８００℃、１５ｍｉｎ热退火后的电阻率测量表明，经５００℃和６００℃退火后的样品具有高的电阻率（～１０８Ω·ｃｍ）；而当退火温度进一步升高时，其电阻率逐渐下降，并具有ｐ型导电行为。沟道ＲＢＳ分析表明，当退火温度高于７００℃时，因注入形成的样品晶格损伤得到基本恢复。

Abstract

y implanting 2.0MeV（φ= 1.0×1015/cm2）+2.9MeV（φ= 1.1 ×1015/cm2） oxygen ions into semi-insulating GaAs crystal

the sample has an almost homogeneous oxygen concentration in the range of 1.5 μm to 2.5 μm. The implanted samples were annealed respectively for 15 minutes at temperatures ranging from 400-800℃. The samples annealed at 500℃and 600℃ have high resistivity （108Ω·cm）

but those annealed at temperatures higher than 600℃ have lower resistivity and become p-type. The 2.0MeV RBS/channeling analysis shows that the crystal is almost totally recovered when annealed at temperature higher than 700℃.

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