Electron spin resonance investigation of irradiated Si-SiO<sub>2</sub>

Liu Changshi

您当前的位置：

首页 >

文章列表页 >

Electron spin resonance investigation of irradiated Si-SiO₂

更新时间：2021-04-09

- Electron spin resonance investigation of irradiated Si-SiO₂
- NUCLEAR TECHNIQUES Issue 3, (1994)
- 作者机构：
  
  1. 中国科学院新疆物理研究所
  2. 航天工业部骊山微电子学研究所
  3. 中国科学院新疆物理研究所航天工业部骊山微电子学研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN304.12
- Published：01 March 1994
- 稿件说明：
移动端阅览
[1]刘昶时,赵元富.不同工艺生成的Si—SiO_2经电离辐照的电子自旋共振研究[J].核技术,1994(03):145-149.

Liu Changshi. Electron spin resonance investigation of irradiated Si-SiO₂[J]. Nuclear techniques, 1994, (3).
[1]刘昶时,赵元富.不同工艺生成的Si—SiO_2经电离辐照的电子自旋共振研究[J].核技术,1994(03):145-149. DOI：

Liu Changshi. Electron spin resonance investigation of irradiated Si-SiO₂[J]. Nuclear techniques, 1994, (3). DOI：

摘要

采用电子自族共振（ＥＳＲ）分析技术，较系统地研究了Ｓｉ－ＳｉＯ２体系中点缺陷Ｐｂ和Ｅ＇随氧化工艺、６０Ｃｏγ射线辐照剂量和辐照所加偏压的变化关系。实验结果表明：两类Ｓｉ／ＳｉＯ２样品在γ辐照前后均能观察到Ｐｂ缺陷，且γ辐照在Ｓｉ－ＳｉＯ２中产生更多的Ｐｂ缺陷；第一类样品在正电场下辐照将产生Ｅ＇缺陷，在自由场下辐照剂量达５×１０４Ｇｙ（Ｓｉ）时才能观察到Ｅ＇缺陷；在辐照后的第二类样品中无Ｅ＇信号出现；此外，Ｐｂ和Ｅ＇的ＥＳＲ谱形半宽（ΔＨ）表明Ｐｂ为慢弛豫缺陷，Ｅ＇则为快弛豫缺陷。最后，对实验结果的机制进行了探讨。

Abstract

he point defects of Pb and E’in two kinds of Si-SiO2 formed by different techllological process

before and after irradistion with different dosage and bias field

have been examined using election spin resonance （ESR）. The experimental results show that there are Pb defects in both kinds of Si-SiO2 no matter whether they are irradiated

and the radiation of 60Co can generate more Pb defects in the Si-SiO2 systems. In the first kind of Si-SiO2 the E’ defects can be observed after irradiation with positive bias field

while with free field these defects appear only when the irradiation dosage is as high as 50 kGy（Si）. But there are not any E’ in the second kind of Si-SiO2 even if they are irradiated. Besides

the ΔH（peak to peak） of Ph and E’ in the ESR spectya indicates that Ph is referred to a slow relaxation defect but E’ to a fast relaxation defect. Finally

the experimental results are qualitatively explained.

关键词

Keywords

references

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Sediment U,Th,K content analyzed using X-ray fluorescence spectrometry for ESR dating samples

Dose response of artificial irradiation of fluvial sediment sample for ESR dating

Quartz Ti-center in ESR dating of Xigeda formation in Sichuanand contrast with magnetic stratigraphic profiles

Reliability of quartz Ti-center in ESR dating of fluvial sediment

ESR study of free radicals induced by ion implantation in sntibiotic-producers

Related Author

方芳

宋为娟

李建平

黄静

LIU Chunru1 HUANG Jing2 LI Jianping1 SONG Weijuan3 FANG Fang2 1

LIU Chunru1 YIN Gongming1 GAO Lu1 LI Jianping1 LIN Min 1

2 HAN Fei1 1

高璐

Related Institution

State Key Laboratory of Earthquake Dynamics,Institute of Geology,China Earthquake Administration,Beijing 100029,China) 2

华东师范大学地理信息科学教育部重点实验室

中国地质大学(北京)地球科学与资源学院

中国原子能科学研究院计量测试部

State Key Laboratory of Earthquake Dynamics,Institute of Geology,China Earthquake Administration,Beijing l00029,China) 2

AI问答

Address：2019 Jialuo Road, Jiading, Shanghai, China Postal code：201800
Tel：021-39194977 Email：LHB@sinap.ac.cn
Technical support is provided by Beijing Founder electronics co., LTD 沪ICP备05005479号-1 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.
Total Visits：880771 Visits Today：298

⁰

Electron spin resonance investigation of irradiated Si-SiO2

DOI：

摘要

Abstract

关键词

Keywords

references

Electron spin resonance investigation of irradiated Si-SiO₂