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1. 中国科学院上海冶金研究所
2. 复旦大学
3. 中国科学院上海冶金研究所复旦大学
Published:01 July 1994
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[1]何治平,周祖尧,关安民,朱文玉,江炳尧,施左宇,林成鲁,钱佑华,陈良尧,苏毅.25keV AS~+大倾斜角注入的损伤分析[J].核技术,1994(07):391-395.
The damage analysis of 25keV As ̄+ implantation into silicon with large tilt angles[J]. Nuclear techniques, 1994, (7).
[1]何治平,周祖尧,关安民,朱文玉,江炳尧,施左宇,林成鲁,钱佑华,陈良尧,苏毅.25keV AS~+大倾斜角注入的损伤分析[J].核技术,1994(07):391-395. DOI:
The damage analysis of 25keV As ̄+ implantation into silicon with large tilt angles[J]. Nuclear techniques, 1994, (7). DOI:
通过25keV的As+注入硅中.用背散射沟道分析技术和椭圆偏振光测量技术分析了在倾斜角分别为7°、15°、30°、45°和60°时的损伤分布,揭示了大倾斜角注入在注入能量较低时的一些物理现象.
RBS/C and ellipsometric spectra were employed to analyse the damage layers of silicon implanted with 26keV As+ ions with the tilt angle of 7°
15°
30°
45° and 60°respectively. Some Physical phenomena of low-energy and large-angle tilt ion implantation were discovered.
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