Energy deposition and radiation effect in MOS structure irradiated with electron beams

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Energy deposition and radiation effect in MOS structure irradiated with electron beams

更新时间：2021-04-09

- Energy deposition and radiation effect in MOS structure irradiated with electron beams
- NUCLEAR TECHNIQUES Issue 6, (1994)
- 作者机构：
  
  中国科学院新疆物理研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC： O655.24
- Published：01 June 1994
- 稿件说明：
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[1]靳涛,马忠权,郭旗.电子束在MOS结构中的能量沉积与辐照效应[J].核技术,1994(06):343-350.

Energy deposition and radiation effect in MOS structure irradiated with electron beams[J]. Nuclear techniques, 1994, (6).
[1]靳涛,马忠权,郭旗.电子束在MOS结构中的能量沉积与辐照效应[J].核技术,1994(06):343-350. DOI：

Energy deposition and radiation effect in MOS structure irradiated with electron beams[J]. Nuclear techniques, 1994, (6). DOI：

摘要

根据电子输运的“双群理论”计算出电子在Ｓｉ－ＳｉＯ２材料中的能量沉积．用与硅等效的外推电离室测定了１．０ＭｅＶ和１．５ＭｅＶ的电子束在ＭＯＳ电容芯片中的吸收剂量．用Ｘ光电子谱（ＸＰＳ）、俄歇谱（ＡＥＳ）、深能级瞬态谱（ＤＬＴＳ）和Ｃ—Ｖ方法测量分析了ＭＯＳ电容Ｓｉ－ＳｉＯ２材料化学结构、界面态密度和Ｃ—Ｖ曲线在辐照前后的变化．根据理论和实验结果，从辐射剂量学的角度分析讨论了电子能量沉积、电离缺陷和辐射效应间的关系．并提出一个关于ＭＯＳ结构电离辐射损伤机理的初步解释。

Abstract

The energy deposition for electron beams in Si-SiO2 materials has been calculated with the two-group theory of electron transportation. The absorption dose for 1.0MeV and 1.5MeV electrons in MOS capacitors was measured with an extrspolation ionization chamber which is equivalent to silicon in stopping power.The chemical structure

interface states and C-V curve of the MOS samples were analyzed before and after irradiation with X-ray photoelectron spectroscopy （XPS）

Auger electron spectroscopy （AES）

deep level transient spectroscopy （DLTS） and C-V method. According to the theory and experimental data

the relationship among election energy deposition

ionizing damage and radiation effect is derived from a view point of dosimetry. Finally

a preliminary explaination for the ionizing damage mechanisms is given.

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