Ion implantation associated defects in Si（100） and their annealing behavior studied by slow positron beams

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Ion implantation associated defects in Si（100） and their annealing behavior studied by slow positron beams

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- Ion implantation associated defects in Si（100） and their annealing behavior studied by slow positron beams
- NUCLEAR TECHNIQUES Issue 6, (1994)
- 作者机构：
  
  1. 中国科学技术大学
  2. 中国科学院上海冶金研究所
  3. 中国科学技术大学结构分析开放研究实验室
  4. 中国科学院国际材料物理中心
  5. 中国科学技术大学中国科学院上海冶金研究所中国科学技术大学结构分析开放研究实验室中国科学院国际材料物理中心
- 作者简介：
- 基金信息：
- DOI：
  CLC： TG156.2+6
- Published：01 June 1994
- 稿件说明：
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[1]韩荣典,周先意,翁惠民,朱警生,南征,虞旭东,秦敢,林成鲁.慢正电子探针研究离子注入硅（100）产生的缺陷及其退火行为[J].核技术,1994(06):321-325.

Ion implantation associated defects in Si（100） and their annealing behavior studied by slow positron beams[J]. Nuclear techniques, 1994, (6).
[1]韩荣典,周先意,翁惠民,朱警生,南征,虞旭东,秦敢,林成鲁.慢正电子探针研究离子注入硅（100）产生的缺陷及其退火行为[J].核技术,1994(06):321-325. DOI：

Ion implantation associated defects in Si（100） and their annealing behavior studied by slow positron beams[J]. Nuclear techniques, 1994, (6). DOI：

摘要

用慢正电子探针分别检测了Ｐ＋注入和Ｐ注入Ｓｉ（１００）的两组样品。与基底样品相比较，注入样品中的缺陷导致了正电子湮没参数的显著变化。由湮没线形参数的变化拟合了两组样品注入损伤的深度分布、缺陷对正电子的捕获系数，讨论了Ｐ＋和Ｐ注入损伤缺陷的差别和它们在退火过程中的不同行为。

Abstract

Two groups of samples implanted by P+ and P respectively were measured with slow positron beams. Unlike the unimplanted sample

the defects in the implanted samples result in obvious changes of the positron annihilation S parameter. The defect profiles of the samples and the defect’s trapping coefficients are obtained from fitting the experimental results. The differences in defect types and annealing behavior between P+ and P implanted samples are discussed.

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