Determination of As impurity in silicon crystal by synchrotron radiation excited X-ray fluorescence micro-analysis

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Determination of As impurity in silicon crystal by synchrotron radiation excited X-ray fluorescence micro-analysis

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- Determination of As impurity in silicon crystal by synchrotron radiation excited X-ray fluorescence micro-analysis
- NUCLEAR TECHNIQUES Issue 8, (1994)
- 作者机构：
  
  1. 中国科学院高能物理研究所
  2. 北京有色金属研究总院
  3. 中国科学院高能物理研究所北京有色金属研究总院
- 作者简介：
- 基金信息：
- DOI：
  CLC： O657.34
- Published：01 August 1994
- 稿件说明：
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[1]吴强,刘亚雯,魏成连,袁汉章,朱腾,闻莺.用同步辐射X射线荧光微区分析技术测定单晶硅中的掺杂元素As[J].核技术,1994(08):476-480.

Determination of As impurity in silicon crystal by synchrotron radiation excited X-ray fluorescence micro-analysis[J]. Nuclear techniques, 1994, (8).
[1]吴强,刘亚雯,魏成连,袁汉章,朱腾,闻莺.用同步辐射X射线荧光微区分析技术测定单晶硅中的掺杂元素As[J].核技术,1994(08):476-480. DOI：

Determination of As impurity in silicon crystal by synchrotron radiation excited X-ray fluorescence micro-analysis[J]. Nuclear techniques, 1994, (8). DOI：

摘要

利用同步辐射Ｘ射线微区分析技术，研究了单晶硅中掺杂元素Ａｓ浓度的定量分布，并对结果进行了讨论。

Abstract

The quantitative distribution of As bounty on the cross section of single-crystalline silicon was studied by synchrotron radiation excited.X-ray fluorescence micro-analysis.The present results are useful both for the study of crystal growing theory and for the production of semiconductor materials.

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