您当前的位置：
首页 >
文章列表页 >
The study of solid phase epitaxy in silicon by the time-resolved reflectivity technique
更新时间：2021-04-09

    • The study of solid phase epitaxy in silicon by the time-resolved reflectivity technique

    • NUCLEAR TECHNIQUES   Issue 8, (1994)
    • CLC： TN304.054

    • Published：01 August 1994

    移动端阅览

  • The study of solid phase epitaxy in silicon by the time-resolved reflectivity technique[J]. Nuclear techniques, 1994, (8). DOI：

  •  
  •  

0

Views

44

下载量

0

CSCD

Alert me when the article has been cited
提交
Tools
Download
Export Citation
Share
Add to favorites
Add to my album

Related Articles

Au-Pt coatings for synchrotron radiation applications
Effect on ZnO thin film photoluminescence after Ag ion implantation
Investigation of plasma stealth excited by 90Sr/90Y
Formation of color centers of optical waveguide in LN crystal by implanting it with 3 MeV oxygen ions
Photoluminescence effects of a-SiO2 films implanted with C ions and irradiated by Pb ions

Related Author

CHEN Jiaqi
QI Runze
FENG Yufei
HUANG Qiushi
WANG Zhanshan
LI Hao
LIU Changlong
ZHU Jiazhu

Related Institution

Key Laboratory of Advanced Micro-structured Materials, Ministry of Education, School of Physics Science and Engineering, Tongji University
School of Science, Tianjin University
Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology
School of Physics, Nanjing University
School of Material Engineering, Nanjing Institute of Technology
0