A measurement system for investigating radiation effects of semiconductor devices and circuits

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A measurement system for investigating radiation effects of semiconductor devices and circuits

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- A measurement system for investigating radiation effects of semiconductor devices and circuits
- NUCLEAR TECHNIQUES Issue 9, (1994)
- 作者机构：
  
  中国科学院新疆物理研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN407
- Published：01 September 1994
- 稿件说明：
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[1]任迪远,高文钰,余学锋,陆妩,张国强,范隆,罗来会,严荣良.半导体器件与电路辐照响应测试系统[J].核技术,1994(09):542-547.

A measurement system for investigating radiation effects of semiconductor devices and circuits[J]. Nuclear techniques, 1994, (9).
[1]任迪远,高文钰,余学锋,陆妩,张国强,范隆,罗来会,严荣良.半导体器件与电路辐照响应测试系统[J].核技术,1994(09):542-547. DOI：

A measurement system for investigating radiation effects of semiconductor devices and circuits[J]. Nuclear techniques, 1994, (9). DOI：

摘要

介绍用于测量ＭＯＳ电容、ＭＯＳＦＥＴ、半导体元器件和集成电路辐照效应的微机测试系统及其功能，并给出该系统在半导体辐射损伤研究甲的应用实例．

Abstract

A computer based measurement system for the study of radiation effects on MOS structures

such as MOS capacitors

MOSFETs

semiconductor devices and integrated circuits was introduced in this paper. The system’s function was described and some application examples were given.

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Related Institution

中国科学院新疆理化技术研究所

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Institute of Nuclear Physics, China Institute of Atomic Energy

Xin jing Institute of physics, The Chinese Academy of Sciences

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