Studies of doped BaTiO<sub>3</sub> by positron annihilation technique

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Studies of doped BaTiO₃ by positron annihilation technique

更新时间：2021-04-09

- Studies of doped BaTiO₃ by positron annihilation technique
- NUCLEAR TECHNIQUES Issue 10, (1994)
- 作者机构：
  
  1. 清华大学
  2. 兰州大学
  3. 敦煌研究院
  4. 清华大学兰州大学敦煌研究院
- 作者简介：
- 基金信息：
- DOI：
  CLC： TQ174.1
- Published：01 October 1994
- 稿件说明：
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[1]张中太,石新兰,张水合,王天民,王宝义.掺杂BaTiO_3系PTC材料的正电子湮没研究[J].核技术,1994(10):627-631.

Studies of doped BaTiO₃ by positron annihilation technique[J]. Nuclear techniques, 1994, (10).
[1]张中太,石新兰,张水合,王天民,王宝义.掺杂BaTiO_3系PTC材料的正电子湮没研究[J].核技术,1994(10):627-631. DOI：

Studies of doped BaTiO₃ by positron annihilation technique[J]. Nuclear techniques, 1994, (10). DOI：

摘要

采用正电子湮没寿命谱学的方法研究了ＢＳＴｉＯ３系ＰＴＣ材料中掺Ｎｂ５＋、Ｙ３＋及不同掺杂量所引起的缺陷变化，并讨论了不同掺杂对ＰＴＣ效应的影响。

Abstract

Positron lifetime studies were performed for PTC material BaTiO3 doped with Nb5+ or Y3+.It was found that positron lifetime of BaTiO3 was sensitive to the changes of the valence state of impurities and the amount of impurities.The lifetime of positrons trapped in Ba2+ vacancy is estimated at 320ps.

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河南师范大学物理与信息工程学院

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Studies of doped BaTiO3 by positron annihilation technique

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摘要

Abstract

关键词

Keywords

references

Studies of doped BaTiO₃ by positron annihilation technique