A study of neutron irradiated  GaAs by positron lifetime method

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A study of neutron irradiated GaAs by positron lifetime method

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- A study of neutron irradiated GaAs by positron lifetime method
- NUCLEAR TECHNIQUES Issue 10, (1994)
- 作者机构：
  
  1. 清华大学
  2. 天津机电部４６所
  3. 中国原子能科学研究所
  4. 清华大学天津机电部４６所中国原子能科学研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN304.23
- Published：01 October 1994
- 稿件说明：
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[1]郁伟中,富大芊,徐文耀,宠福常.中子辐照GaAs的变温正电子寿命研究[J].核技术,1994(10):608-612.

A study of neutron irradiated GaAs by positron lifetime method[J]. Nuclear techniques, 1994, (10).
[1]郁伟中,富大芊,徐文耀,宠福常.中子辐照GaAs的变温正电子寿命研究[J].核技术,1994(10):608-612. DOI：

A study of neutron irradiated GaAs by positron lifetime method[J]. Nuclear techniques, 1994, (10). DOI：

摘要

用正电子湮没寿命谱研究中子辐照前后半绝缘ＧａＡｓ在等时退火过程中的缺陷行为．发现辐照后的样品大约从７０℃起空位－填隙子对和空位－反格点缺陷开始复合．５００℃前空位和空位团可消除．７４０℃后可能会重新产生缺陷。ＶＡｓ是一种浅势阱，对正电子的束缚能大约为０．０３１－０．０３２ｅＶ。

Abstract

The defect behavior of semi-insulating（SI） GaAs samples has been measured by the positron lifetime spectrometer at different isochronal annealing temperatures before and after neutron irradiation. It is found that vacancy-interstitial pairs and vacancy-antisite defects begin to recombine at 70℃

and vacancies and voids will disappear before 500℃

but new defects may reproduce after 740℃. The positron binding energy of shallow traps（VAs）is estimated to be 0.031-0.032eV.

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