Effects of ionizing radiation on breakdown voltage for high voltage offset-gated PMOSFETs

Gao Wenyu Ren Diyuan Lu Wu Yan Rongliang

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Effects of ionizing radiation on breakdown voltage for high voltage offset-gated PMOSFETs

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- Effects of ionizing radiation on breakdown voltage for high voltage offset-gated PMOSFETs
- NUCLEAR TECHNIQUES Issue 1, (1993)
- 作者机构：
  
  1. 中国科学院新疆物理研究所
  2. 骊山微电子公司,乌鲁木齐,830011
  3. ,陕西,710000
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：01 January 1993
- 稿件说明：
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[1]高文钰,任迪远,陆妩,严荣良,赵元富,李荫波.高压偏移栅PMOSFET击穿电压的电离辐照响应[J].核技术,1993(01):1-5.

Gao Wenyu Ren Diyuan Lu Wu Yan Rongliang. Effects of ionizing radiation on breakdown voltage for high voltage offset-gated PMOSFETs[J]. Nuclear techniques, 1993, (1): 1-5.
[1]高文钰,任迪远,陆妩,严荣良,赵元富,李荫波.高压偏移栅PMOSFET击穿电压的电离辐照响应[J].核技术,1993(01):1-5. DOI：

Gao Wenyu Ren Diyuan Lu Wu Yan Rongliang. Effects of ionizing radiation on breakdown voltage for high voltage offset-gated PMOSFETs[J]. Nuclear techniques, 1993, (1): 1-5. DOI：

摘要

揭示了辐照引起击穿电压变化的机制

提出了提高高压偏移栅PMOSFET击穿电压抗电离辐照的方法。对辐照后击穿电压退火特性进行了研究。

Abstract

Ionizing radiation responses of breakdown voltage are studied for the high voltage offset- gated P- channel MOSFETs. It is shown that the variation of breakdown voltage after irradiation results from the charges induced by irradiation near the field SiO2/ Si interface. The ionizing radiation hardening methods for this kind of devices are proposed. The annealing effects on breakdown voltage are also investigated.

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