Simulation of reaction yield curve and boron depth profiling in amorphous silicon films

Liao Changgeng Yang Shengsheng Jiang Hui Wang Yongqiang Zheng Zhihao

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Simulation of reaction yield curve and boron depth profiling in amorphous silicon films

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- Simulation of reaction yield curve and boron depth profiling in amorphous silicon films
- NUCLEAR TECHNIQUES Issue 3, (1993)
- 作者机构：
  
  1. 兰州大学
  2. 兰州大学,兰州,730001
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：01 March 1993
- 稿件说明：
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[1]廖常庚,杨生胜,姜辉,汪永强,郑志豪.核反应产额曲线的模拟与非晶硅薄膜中硼的深度分布研究[J].核技术,1993(03):183-187.

Liao Changgeng Yang Shengsheng Jiang Hui Wang Yongqiang Zheng Zhihao. Simulation of reaction yield curve and boron depth profiling in amorphous silicon films[J]. Nuclear techniques, 1993, (3): 183-187.
[1]廖常庚,杨生胜,姜辉,汪永强,郑志豪.核反应产额曲线的模拟与非晶硅薄膜中硼的深度分布研究[J].核技术,1993(03):183-187. DOI：

Liao Changgeng Yang Shengsheng Jiang Hui Wang Yongqiang Zheng Zhihao. Simulation of reaction yield curve and boron depth profiling in amorphous silicon films[J]. Nuclear techniques, 1993, (3): 183-187. DOI：

摘要

报道了一种模拟共振反应产额曲线的方法。利用

B（p

d）

Be在E

= 163keV的共振反应

通过反应产额曲线的模拟研究了不同衬底温度下辉光放电制备的掺硼氢化非晶硅-碳膜中硼的深度分布。给出了不同衬底温度下淀积薄膜中硼深度分布的一些特征。结果表明反应产额曲线的模拟对改善共振反应分析的深度分辨和简化分析方法是有效的

对掺硼非晶硅薄膜中硼的深度分布研究是有益的。

Abstract

A simulation method of resonance reaction yield curve is reported. The boron depth profiles in boron doped amorphous silicon- carbon films prepared in a rf glow discharge at various substrate temperatures were studied by using 11B（p

a ）8Be at Ep = 163keV resonance reaction and simulating the reaction yield curve. Some of the characteristics of boron depth profile in these films were presented. The results show that the simulation of resonance reaction yield curve should be effective for improving the depth resolution and simplifying the analysis method of boron depth profiling and useful for the research of boron doped amorphous films.

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