Effective measures have been adopted for increasing the negative ion beam intensity and decreasing the emittance of the Model 860A high intensity sputter source through enhancing the cathode voltage and rebuilding a focusing geometry electrode system. By using a Ta sheet spherical geometry ionizer the sputtering region has been narrowed down to a diameter of

0.75mm. Three porcelain rods replacing the original cathode insulator make the target voltage reach 10kV. The negative ion beam intensity of some species has increased by 300% and the transmission efficiency is improved. These measures have improved operation conditions of the 2×1.7MV Tandetron for large dose high energy ion implatation.