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1. 清华大学
2. 清华大学,北京,100084
Published:01 June 1993
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[1]郁伟中,翁自立,蒋清明,曹必松,徐湛.室温下GaAs中正电子迁移率的测量[J].核技术,1993(06):321-324.
Yu Weizhong Weng Zili Jiang Qingming Cao Bisong Xu Zhan. Measurement of positron mobility in GaAs at room temperature[J]. Nuclear techniques, 1993, (6): 321-324.
[1]郁伟中,翁自立,蒋清明,曹必松,徐湛.室温下GaAs中正电子迁移率的测量[J].核技术,1993(06):321-324. DOI:
Yu Weizhong Weng Zili Jiang Qingming Cao Bisong Xu Zhan. Measurement of positron mobility in GaAs at room temperature[J]. Nuclear techniques, 1993, (6): 321-324. DOI:
用正电子湮没寿命谱方法测量了GaAs中的正电子迁移率
在低电场(小于300Vcm
-1
)和室温294K条件下测得μ
+
=880±40cm
2
V
s
。
The positron mobility in GaAs has been measured at room temperature(294K)
in low electric field
a μ+ value of 880±40cm2V-1V-1 was obtained.
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