γ-ray irradiation test of F implanted MOS capacitors after dry O2 gate oxidation has been performed

and post- irradiation characteristics of the MOS capacitors with different F implantation doses has been investigated. It is found that the gate oxide containing F can restrain radiation-induced oxide charges and interface states. The range of F implantation doses with the best restraining effects is about 5×1014 F/cm2- 2×1016F/cm2. It can be deduced that F on the interface of Si/SiO2 and in SiO2 will directly relate to the radiation effects of MOS devices

and the behaviors of F depend on the implantation condition. The experimental results are qualitatively explained.