Si/CoSi<sub>2</sub>/Si/SiO<sub>2</sub>/Si（100） structure formed by ion beam synthesis

Wu Mingfang Lai Chuxi Yao Shude Wang Xuemei

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Si/CoSi₂/Si/SiO₂/Si（100） structure formed by ion beam synthesis

更新时间：2021-04-09

- Si/CoSi₂/Si/SiO₂/Si（100） structure formed by ion beam synthesis
- NUCLEAR TECHNIQUES Issue 6, (1993)
- 作者机构：
  
  1. 北京大学
  2. 北京大学,北京,100871
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：01 June 1993
- 稿件说明：
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[1]吴名枋,赖初喜,姚淑德,王雪梅.离子束合成法形成的Si/CoSi_2/Si/SiO_2/Si(100)结构[J].核技术,1993(06):340-343.

Wu Mingfang Lai Chuxi Yao Shude Wang Xuemei. Si/CoSi₂/Si/SiO₂/Si（100） structure formed by ion beam synthesis[J]. Nuclear techniques, 1993, (6): 340-343.
[1]吴名枋,赖初喜,姚淑德,王雪梅.离子束合成法形成的Si/CoSi_2/Si/SiO_2/Si(100)结构[J].核技术,1993(06):340-343. DOI：

Wu Mingfang Lai Chuxi Yao Shude Wang Xuemei. Si/CoSi₂/Si/SiO₂/Si（100） structure formed by ion beam synthesis[J]. Nuclear techniques, 1993, (6): 340-343. DOI：

摘要

用离子束合成法先后在Si（100）衬底中形成了连续的SiO

及CoSi

埋层

从而形成了复合的Si/CoSi

/Si/SiO

/Si（100）结构。卢瑟福背散射、沟道技术及用扫描电镜所作的电子通道花样被用来对这一结构形成的各个阶段进行分析。这一结构可望用于今后新型的微电子器件、光电器件及三维集成电路等。

Abstract

A Si/CoSi2/Si/SiO2/Si（100） complex structure has been formed by using ion beam synthesis technique. Rutherford backscattering

channelling technique and electron channelling pattern given by scanning electron microscope have been used to analyse the formation of this structure at various stages. Such a structure is hopeful to be applied in the noval microelectronic devices

optoelectronic devices and three dimentional integrated circuits.

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Si/CoSi2/Si/SiO2/Si（100） structure formed by ion beam synthesis

DOI：

摘要

Abstract

关键词

Keywords

references

Si/CoSi₂/Si/SiO₂/Si（100） structure formed by ion beam synthesis