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1. 中国科学技术大学
2. 中国科学技术大学,合肥,230026
Published:01 August 1993
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[1]朱俊杰,章世玲,郑允弘.用内转换电子穆斯堡尔谱法研究掺锑气敏材料SnO_2[J].核技术,1993(08):492-495.
Zhu Junjie Zhang Shiling Zheng Yunhong. A study of gas sensing material Sb doped SnO2 by CEMS method[J]. Nuclear techniques, 1993, (8): 492-495.
用CEMS方法对掺锑的SnO
2
气敏薄膜作了研究。该材料对H
2
、CO的气敏响应取决于掺锑浓度(x%)和退火温度。实验发现:样品的CEMS参量同质异能移和四极分裂分布宽度在x=1%时为最小值
正好与气敏响应灵敏度达最大值相一致。由此进一步讨论了气敏薄膜的敏感机理。
Sn Mb’ssbauer spectra for the surface layer of Sb doped SnO2 thin film have been obtained by using CEMS method. The gas- sensing response of these films for H2 and CO depends on concentration of doped Sb(x%) and annealing temperature . It is found that when x = 1% the CEMS parameters of samples δ(IS) and σ△ (QS’s distribution width) reach minima while the gas sensing sensitivity reachs maximum. The gas sensitive mechanism is discussed.
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