A study of Ge<sub>x</sub>Si<sub>1-x</sub>/Si SLS by ion channeling technique

Huang Mengbing Zhao Guoqing

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A study of Ge_xSi_1-x/Si SLS by ion channeling technique

更新时间：2021-04-09

- A study of Ge_xSi_1-x/Si SLS by ion channeling technique
- NUCLEAR TECHNIQUES Issue 8, (1993)
- 作者机构：
  
  1. 复旦大学
  2. 复旦大学,上海,200433
- 作者简介：
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- DOI：
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- Published：01 August 1993
- 稿件说明：
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[1]黄孟兵,赵国庆.用离子束沟道技术研究Ge_xS_(1-x)/Si应变超晶格[J].核技术,1993(08):460-464.

Huang Mengbing Zhao Guoqing. A study of Ge_xSi_1-x/Si SLS by ion channeling technique[J]. Nuclear techniques, 1993, (8): 460-464.
[1]黄孟兵,赵国庆.用离子束沟道技术研究Ge_xS_(1-x)/Si应变超晶格[J].核技术,1993(08):460-464. DOI：

Huang Mengbing Zhao Guoqing. A study of Ge_xSi_1-x/Si SLS by ion channeling technique[J]. Nuclear techniques, 1993, (8): 460-464. DOI：

摘要

用RBS结合沟道技术对Ge

1-x

/Si应变超晶格材料的组分和形变进行了分析。实验结果与样品生长参数记录及理论计算值符合得很好。实验表明

离子束沟道技术对于应变超晶格的结构研究是一种十分有效的分析方法。

Abstract

The composition and strain of GexSi1-x/Si strained layer superlattice （SLS） have been studied by the RBS channeling technique. The experimental results turn out to be in good agreement with the growth data and theoretical calculations. This work has shown that the RBS channeling technique is a quite powerful method in structure studies of SLS materials.

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A study of GexSi1-x/Si SLS by ion channeling technique

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摘要

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A study of Ge_xSi_1-x/Si SLS by ion channeling technique