The irradiated damage states in MOS

Ma Zhongquan Jin Tao Guo Qi

您当前的位置：

首页 >

文章列表页 >

The irradiated damage states in MOS

更新时间：2021-04-09

- The irradiated damage states in MOS
- NUCLEAR TECHNIQUES Issue 4, (1992)
- 作者机构：
  
  1. 中国科学院新疆物理研究所
  2. 中国科学院新疆物理研究所,乌鲁木齐,830011
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：01 April 1992
- 稿件说明：
移动端阅览
[1]马忠权,靳涛,郭旗.MOS结构中的辐照损伤态[J].核技术,1992(04):228-235.

Ma Zhongquan Jin Tao Guo Qi. The irradiated damage states in MOS[J]. Nuclear techniques, 1992, (4): 228-235.
[1]马忠权,靳涛,郭旗.MOS结构中的辐照损伤态[J].核技术,1992(04):228-235. DOI：

Ma Zhongquan Jin Tao Guo Qi. The irradiated damage states in MOS[J]. Nuclear techniques, 1992, (4): 228-235. DOI：

摘要

本文用深能级瞬态谱（DLTS）、X-光电子谱（XPS）与俄歇电子谱（AES）研究了室温下1.5MeV、9.0MeV电子和2.0MeV H

离子(剂量10

—10

/cm

)在MOS结构的Si-SiO

界面和P-型Si（100）中的辐照缺陷

发现经电子、H

辐照后Si-SiO

界面态成倍增大。当H

注入剂量大于1×10

/cm

时电容失效。同时

在经历了室温和动力学退火后两个H

引入的深能级HT1（E

+0.18eV）和HT2（E

+0.36eV）仍然存在。从上述缺陷的深度分布、H在Si中分布及空位、杂质退火和Si原子移位行为来看

与之相应的两个缺陷态主要和H

在Si中产生的双空位[V

]、[SiH-V

]复合中心和位移原子Si

的损伤有关

与H

在Si中能量沉积关系较弱。

Abstract

The defects induced by 1.5 and 9.0 MeV electron and 2.0 MeV hydrogen ion at Si-SiO2 interface and in bulk P-type Si of MOS were investigated by using DLTS （Deep Level Transient Spectroscopy）

XPS（X-rayPhotoelectron Spectroscopy）and AES （Auger Electron Spectroscopy） techniques. Some new interface states and two bulk defects as HT1 （EV + 0.18eV

σP=2.8×10-16cm2） and HT2 （Ev+0.36eV

σp=3.3×10-17cm2） were found after e- and H+ irradiation. All the defects survive at RT. and after dynamic annealing

and capacitance of MOS was of failure when dose ofH+ ions was greater than 1 × 1014/cm2. Based on the profiles of defects observed

distribution of H+ in Si

and behaviour of annealing and Si atoms displacement It can be concluded that the two "hole traps" in the lower half of the band gap are mainly related to divacancy [V2]

[SiH-VF] complex center and the damages of displacement atom SiD

but weakly related to energy deposition for H+ in silicon.

关键词

Keywords

references

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Application of positron annihilation techniques in non-destructive testing

Study of photo-stimulated luminescence in Ba_0.95M_0.05FBr:Eu²⁺（M=Sr,Ca） Powder

A study of damages in GaAs induced by 5.0MeV and 9.5MeV fastneutron irradiation using positron annihilation technique

Investigation of N ion induced defects in metal Ni with slow positron beam

A study of luminous properties of plastic scintillators under neutron irradiation

Related Author

CHEN Zhiqiang

ZENG Hui

WU Yichu

WANG Rongshan

LIU Xiangbing

XUE Xudong

JIANG Jing

LIANG Jianping

Related Institution

Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Jiading Campus

Center of Plant Life Management, Suzhou Nuclear Power Research Institute

School of Physics and Technology, Hubei Key Laboratory of Nuclear Solid State Physics, Wuhan University

National Synchrotron Radiation Laboratory, University of Science and Technology of China

China Institute of Atomic Energy

AI问答

Address：2019 Jialuo Road, Jiading, Shanghai, China Postal code：201800
Tel：021-39194977 Email：LHB@sinap.ac.cn
Technical support is provided by Beijing Founder electronics co., LTD 沪ICP备05005479号-1 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.
Total Visits：880718 Visits Today：245

⁰