Diamond-like carbon films

deposited by a dual-ion beam sputtering method on glass substrates at temperature less than 50℃

were irradiated by 114 keV carbon ions with doses of 2 × 1016 ions/cm2 and 1 ×1017 ions/cm2

respectively. Raman spectroscopy

infra-red transmittance spectroscopy and electrical resistivity were used to characterize the as-deposited and the irradiated films. It was shown that the as-deposited films contain SP3C-C

SP2C-C

SP3C-Hand SP2C-H bondings with bond-angle disorder. The C+ irradiation led to decrease of SP3C-H bonds and increase of SP2C-H bonds in films. Meanwhile

the bond-angle disorder was decreased

the crystallization degree increased

and the number and/or size of microcrystals also increased due to irradiation. All these structural changes led to considerable decreases of electrical resistivity as well as infra-red transmittance of irradiated films.