The effect of ion implantation on the fretting behaviour of Ti6AI4V alloy

Wang Tianmin Shi Ji Lin Ping

您当前的位置：

首页 >

文章列表页 >

The effect of ion implantation on the fretting behaviour of Ti6AI4V alloy

更新时间：2021-04-09

- The effect of ion implantation on the fretting behaviour of Ti6AI4V alloy
- NUCLEAR TECHNIQUES Issue 8, (1992)
- 作者机构：
  
  1. 兰州大学
  2. 中国科学院兰州化学物理研究所,兰州,730001
  3. ,兰州,730000
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：01 August 1992
- 稿件说明：
移动端阅览
[1]王天民,史迹,林萍,张绪寿,刘洪,张平余.离子注入对Ti6Al4V合金微动磨损行为的影响[J].核技术,1992(08):449-456.

Wang Tianmin Shi Ji Lin Ping. The effect of ion implantation on the fretting behaviour of Ti6AI4V alloy[J]. Nuclear techniques, 1992, (8): 449-456.
[1]王天民,史迹,林萍,张绪寿,刘洪,张平余.离子注入对Ti6Al4V合金微动磨损行为的影响[J].核技术,1992(08):449-456. DOI：

Wang Tianmin Shi Ji Lin Ping. The effect of ion implantation on the fretting behaviour of Ti6AI4V alloy[J]. Nuclear techniques, 1992, (8): 449-456. DOI：

摘要

考查了Ti6Al4V合金经N

、C

、N

离子注入前后的微动磨损行为。利用AES、TEM、SEM、EDX等手段

对注入表面层的成分、结构及磨损表面形貌进行了分析

进而研究了离子注入对该合金微动磨损行为的影响。

Abstract

The fertting behaviour of Ti6Al4V alloy implanted with nitrogen

carbon and combined nitrogen and carbon was investigated. AES and TEM were used to determine the chemical compositions of the implanted layers

and SEM and EDX to observe the fretted surface of specimens and to determine the compositions of the fretted surface. Moreover

the fretting mechanism of the alloy before and after ion implantation was studied.

关键词

Keywords

references

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Biological effects of N+ ion implantation and UV radiation on Streptomyces albus

Doping study on ion implantation of polyaniline

Progress of research work on ion beam analysis, ion implantation and material modification in Institute of Physics, Academia Sinica

Oxidation resistance property of Y⁺ implanted H₁₃ steel analysed by ion backscattering

Investigation of N ion induced defects in metal Ni with slow positron beam

Related Author

戴桂馥

李金芳

赵艳珩

张晓红

WU Jian1 DAI Guifu1 LI Jinfang2 ZHAO Yanheng2 ZHANG Xiaohong3 1

鲍锦荣

万洪和

林森浩

Related Institution

郑州大学离子束生物工程省重点实验室

濮阳泓天威药业有限公司

Biotechnology Department, Zhengzhou University, Zhengzhou 450052, China ) 2

中国科学院长春应用化学研究所

Shanghai Institute of Nuclear Research, Academia Sinica, Shanghai 201800)Jing Xiabin Wang Lixiang Jiang Hai

AI问答

Address：2019 Jialuo Road, Jiading, Shanghai, China Postal code：201800
Tel：021-39194977 Email：LHB@sinap.ac.cn
Technical support is provided by Beijing Founder electronics co., LTD 沪ICP备05005479号-1 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.
Total Visits：880771 Visits Today：298

⁰