Influence of sputtering and out-diffusion in Er implanted SiO<sub>2</sub>/Si on depth profile

ZHANG Tonghe WU Yuguang XIAO Zhisong LIU Andong

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Influence of sputtering and out-diffusion in Er implanted SiO₂/Si on depth profile

更新时间：2021-03-12

- Influence of sputtering and out-diffusion in Er implanted SiO₂/Si on depth profile
- NUCLEAR TECHNIQUES Issue 3, (2005)
- 作者机构：
  
  1. 北京师范大学射线束与材料改性教育部重点实验室低能核物理研究所
  2. 北京师范大学射线束与材料改性教育部重点实验室低能核物理研究所北京市辐射中心北京,100875
- 作者简介：
- 基金信息：
  
  国家自然科学基金项目(50141022);国家 863 计划(2001AA38020)项目资助
- DOI：
  CLC： TN204
- Published：01 March 2005
- 稿件说明：
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[1]张通和,吴瑜光,肖志松,刘安东.Er离子注入Si和SiO_2/Si溅射和外扩散对浓度分布的影响[J].核技术,2005(03):205-208.

ZHANG Tonghe WU Yuguang XIAO Zhisong LIU Andong. Influence of sputtering and out-diffusion in Er implanted SiO₂/Si on depth profile[J]. Nuclear techniques, 2005, (3): 205-208.
[1]张通和,吴瑜光,肖志松,刘安东.Er离子注入Si和SiO_2/Si溅射和外扩散对浓度分布的影响[J].核技术,2005(03):205-208. DOI：

ZHANG Tonghe WU Yuguang XIAO Zhisong LIU Andong. Influence of sputtering and out-diffusion in Er implanted SiO₂/Si on depth profile[J]. Nuclear techniques, 2005, (3): 205-208. DOI：

摘要

利用金属蒸发真空弧（MEVVA）离子源引出的 Er 离子对单晶硅和单晶硅衬底上的 SiO2 膜进行了离子注入

用背散射方法分析了不同注入条件下 Er 原子浓度分布。实验结果表明

离子注入突破了平衡生长方法掺Er 硅溶解度的限制

实现了离子的高浓度掺杂。在硅和氧化硅中

最大 Er 体浓度分别达到 4.71×1021 cm–3 和7.67 ×1021 cm–3

远超过了常规方法所能得到的 Er 掺杂浓度。但是由于 Er 离子重

射程短而溅射效应强

因此限制了 Er 原子浓度的进一步提高。在注量相同时

随束流密度的增加

Er 外扩散效应增加。用快速退火热处理可消除部分辐射损伤

但是退火也引起了 Er 原子的外扩散。本文中给出了溅射和外扩散引起的 Er 原子丢失量与注入条件和退火条件的关系

给出了获得高浓度 Er 的途径。Er 注入单晶硅和热氧化硅

随注量的增加 Er 保留量逐渐达到饱和

饱和量接近 2×1017 cm–2

而丢失量增加。

Abstract

Erbium ions were implanted into Si and thermally oxidized SiO2/Si by MEVVA (Metal Vapor Vacuum Arc) ion source implanter. Depth profiles of Er concentration were measured by Rutherford Backscattering Spectrometry (RBS). The results show that the Er concentration is greater than that by using conventional methods. The maximum Er concentration in Er implanted Si and SiO2 is 4.71×1021 cm–3 and 7.67×1021 cm–3 respectively. But increase of the concentration was limited by some factors

such as heavier ion

shallow implanted layer and serious sputtering. Out-diffusion effects were increased with the increase of ion flux and annealing temperature. The relations between lost Er atom amount and the implantation condition were studied. Lost Er atom amount was increased with the increase of ion flux

dose and out-diffusion. In other words

retained amounts in implanted layer was decreased with the increase of these factors.

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Influence of sputtering and out-diffusion in Er implanted SiO2/Si on depth profile

DOI：

摘要

Abstract

关键词

Keywords

references

Influence of sputtering and out-diffusion in Er implanted SiO₂/Si on depth profile