Electrical performance analysis of electron irradiated SiGe HBT and Si BJT

HUANG Wentao WANG Jilin LIU Zhinong CHEN Changchun CHEN Peiyi QIAN Peixin

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Electrical performance analysis of electron irradiated SiGe HBT and Si BJT

更新时间：2021-03-12

- Electrical performance analysis of electron irradiated SiGe HBT and Si BJT
- NUCLEAR TECHNIQUES Issue 3, (2005)
- 作者机构：
  
  1. 清华大学微电子学研究所
  2. 清华大学核能设计研究院,北京,100084
- 作者简介：
- 基金信息：
  
  国家自然科学基金(10075029、69836020);国家“863”高技术研究发展计划项目(2002AA3Z1230) 资助
- DOI：
  CLC： O472
- Published：01 March 2005
- 稿件说明：
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[1]黄文韬,王吉林,刘志农,陈长春,陈培毅,钱佩信,孟祥提.电子辐照SiGe HBT和SiBJT的直流特性分析[J].核技术,2005(03):213-216.

HUANG Wentao WANG Jilin LIU Zhinong CHEN Changchun CHEN Peiyi QIAN Peixin. Electrical performance analysis of electron irradiated SiGe HBT and Si BJT[J]. Nuclear techniques, 2005, (3): 213-216.
[1]黄文韬,王吉林,刘志农,陈长春,陈培毅,钱佩信,孟祥提.电子辐照SiGe HBT和SiBJT的直流特性分析[J].核技术,2005(03):213-216. DOI：

HUANG Wentao WANG Jilin LIU Zhinong CHEN Changchun CHEN Peiyi QIAN Peixin. Electrical performance analysis of electron irradiated SiGe HBT and Si BJT[J]. Nuclear techniques, 2005, (3): 213-216. DOI：

摘要

研究了 1 MeV 不同剂量电子辐照前后 SiGe 异质结晶体管（HBT）的直流特性

并与 Si 双极晶体管（BJT）进行了比较。结果表明辐照后 SiGe HBT 的 IB基本不变

IC和β 都下降;随电子辐照剂量的增加

Ic和β 都减小。对 Si BJT 而言

IB和 IC与在相同辐照剂量辐照后的 SiGe HBT 相比都增大很多

β 下降幅度也很大。这说明 SiGe HBT 具有比 Si BJT 更好的抗辐照性能。对电子辐照后器件电学性能的变化机制进行了初步分析。

Abstract

The change of electrical performances of 1 MeV electron irradiated silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) and Si bipolar junction transistor (BJT) was studied. After electron irradiation

the collector current IC decreased while the base current IB did not change

and the current gain β decreased for SiGe HBT. For conventional Si BJT

both IC and IB increased and β decreased much more obviously than SiGe HBT at the same fluence. It was shown that SiGe HBT had a better anti-radiation performance than Si BJT. The mechanism of electrical performance changes induced by irradiation was preliminarily discussed.

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Related Institution

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天津电源研究所乌鲁木齐 830011 中国科学院研究生院

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