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Influence of thickness of gate oxide layer on the irradiation response of CMOS op-amp
更新时间:2021-03-12
    • Influence of thickness of gate oxide layer on the irradiation response of CMOS op-amp

    • NUCLEAR TECHNIQUES   Issue 3, (2005)
    • CLC: TN72
    • Published:01 March 2005

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  • LU Wu1 REN Diyuan1 GUO Qi1 YU Xuefeng1 ZHENG Yufeng2 ZHANG Jun2 1. Influence of thickness of gate oxide layer on the irradiation response of CMOS op-amp[J]. Nuclear techniques, 2005, (3): 227-230. DOI:

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