Radiation effects and ageing characteristics of bipolar junction transistors subjected to high and low dose rate total dose irradiations

LU Wu YU Xuefeng REN Diyuan E RKIN GUO Qi

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Radiation effects and ageing characteristics of bipolar junction transistors subjected to high and low dose rate total dose irradiations

更新时间：2021-03-12

- Radiation effects and ageing characteristics of bipolar junction transistors subjected to high and low dose rate total dose irradiations
- NUCLEAR TECHNIQUES Issue 12, (2005)
- 作者机构：
  
  1. 中国科学院新疆理化技术研究所
  2. 中国科学院新疆理化技术研究所,乌鲁木齐,830011
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN322.8
- Published：01 December 2005
- 稿件说明：
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[1]陆妩,余学锋,任迪远,艾尔肯,郭旗.双极晶体管不同剂量率的辐射效应和退火特性[J].核技术,2005(12):925-928.

LU Wu YU Xuefeng REN Diyuan E RKIN GUO Qi. Radiation effects and ageing characteristics of bipolar junction transistors subjected to high and low dose rate total dose irradiations[J]. Nuclear techniques, 2005, (12): 925-928.
[1]陆妩,余学锋,任迪远,艾尔肯,郭旗.双极晶体管不同剂量率的辐射效应和退火特性[J].核技术,2005(12):925-928. DOI：

LU Wu YU Xuefeng REN Diyuan E RKIN GUO Qi. Radiation effects and ageing characteristics of bipolar junction transistors subjected to high and low dose rate total dose irradiations[J]. Nuclear techniques, 2005, (12): 925-928. DOI：

摘要

对不同类型和型号的国产及进口双极晶体管的不同剂量率的辐照效应及退火特性进行了研究。结果表明:在辐照的剂量率范围内

无论是国产还是进口的双极晶体管

都有明显的低剂量率辐照损伤增强现象

且NPN管比PNP管的明显。文中对引起双极器件辐照损伤差异的机理进行了探讨。

Abstract

Radiation effects and ageing characteristics were investigated for different types of domestic and/or imported bipolar junction transistors with five dose rates ranging from 100 to 0.002 rad(Si)/s at the same total dose. The results showed that the enhanced low-dose-rate sensitivity (ELDRS) exists in either domestic or imported bipolar transistors

and the NPN transistors are more obvious than PNP ones. Possible mechanism for the effect was discussed.

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Related Institution

Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics

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