Development of X-ray detector based on silicon photodiode array

WU Zhizong JIANG Meiling LIANG Pingzhi

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Development of X-ray detector based on silicon photodiode array

更新时间：2021-03-12

- Development of X-ray detector based on silicon photodiode array
- NUCLEAR TECHNIQUES Issue 11, (2005)
- 作者机构：
  
  1. 中国科学院上海技术物理研究所
  2. 中国科学院上海技术物理研究所,上海,200083
- 作者简介：
- 基金信息：
- DOI：
  CLC： TL814
- Published：01 November 2005
- 稿件说明：
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[1]武志宗,江美玲,梁平治.基于硅光二极管阵列的X射线探测器的研制[J].核技术,2005(11):79-83.

WU Zhizong JIANG Meiling LIANG Pingzhi. Development of X-ray detector based on silicon photodiode array[J]. Nuclear techniques, 2005, (11).
[1]武志宗,江美玲,梁平治.基于硅光二极管阵列的X射线探测器的研制[J].核技术,2005(11):79-83. DOI：

WU Zhizong JIANG Meiling LIANG Pingzhi. Development of X-ray detector based on silicon photodiode array[J]. Nuclear techniques, 2005, (11). DOI：

摘要

介绍了10元CsI（Tl）闪烁晶体与10元硅光二极管阵列耦合而成的X射线探测器的设计制造过程。其中

二极管光敏元为0.75mm×1.25mm的窄条形

中心距为1.25mm

外观尺寸为12.5mm×1.25mm;闪烁体单元为1.0mm×1.5mm的窄条形

中心距为1.25mm

外观尺寸为12.5mm×1.9mm。对该探测器的硅光二极管进行了光谱测试和噪声测试

对射线探测器进行了串音和均匀性等性能测试。二极管的噪声为10?4V

射线探测器的非均匀性为0.08

有串音现象发生。对存在的问题进行了分析讨论并提出了改进方案。

Abstract

A prototype of a 10-element photodiode array coated by 10-element CsI(Tl) scintillator array has been made and used as an X-ray detector. Its active area of photodiode is 0.75mm×1.25mm

apparent size is 10.25mm×1.75mm and the pitch of that is 1.25mm. Test results have been presented in this paper. The noise voltage of photodiode is about 10-4V; the non-uniformity is 0.08; the crosstalk between pixel to pixel has been obversed; moreover

some other performances of our detector have also been given as curves in this paper. Discussions on how to improve signal amplitude

how to decrease noise of detector system

how to amend crosstalk between pixels have been given.

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