Native defects in ZnO films studied by slow positron beam

PENG Chengxiao1 WENG Huimin1 YANG Xiaojie2 YE Bangjiao1 ZHOU Xianyi1 HAN Rongdian1 1

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Native defects in ZnO films studied by slow positron beam

更新时间：2021-03-12

- Native defects in ZnO films studied by slow positron beam
- NUCLEAR TECHNIQUES Issue 11, (2005)
- 作者机构：
  
  1. 中国科学技术大学近代物理系核固体实验室
  2. 中国科学院半导体研究所纳米光电子实验室
  3. 中国科学技术大学近代物理系核固体实验室,合肥,230026
  4. ,北京,100083
- 作者简介：
- 基金信息：
  
  国家自然科学基金项目(批准号10425072)资助
- DOI：
  CLC： O474
- Published：01 November 2005
- 稿件说明：
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[1]彭成晓,翁惠民,杨晓杰,叶邦角,周先意,韩荣典.慢正电子对ZnO中本征缺陷的研究[J].核技术,2005(11):36-39.

PENG Chengxiao1 WENG Huimin1 YANG Xiaojie2 YE Bangjiao1 ZHOU Xianyi1 HAN Rongdian1 1. Native defects in ZnO films studied by slow positron beam[J]. Nuclear techniques, 2005, (11).
[1]彭成晓,翁惠民,杨晓杰,叶邦角,周先意,韩荣典.慢正电子对ZnO中本征缺陷的研究[J].核技术,2005(11):36-39. DOI：

PENG Chengxiao1 WENG Huimin1 YANG Xiaojie2 YE Bangjiao1 ZHOU Xianyi1 HAN Rongdian1 1. Native defects in ZnO films studied by slow positron beam[J]. Nuclear techniques, 2005, (11). DOI：

摘要

利用慢正电子研究了不同氧含量时射频磁控反应溅射制备的ZnO样品

观察到ZnO中本征缺陷（VO

VZn）随混合气体中O2比例（PO2）的变化关系。结果表明:PO2≤70%时

这些ZnO样品中存在同一种缺陷类型

O空位（VO）和Zn填隙（Zni）可能是材料中主要缺陷。PO2>70%时

这些ZnO样品中缺陷以Zn空位（VZn）为主。随着反应室中O2含量的增加

样品的Zn空位（VZn）浓度逐渐增加;当PO2为85%时

与正电子湮没的VZn数目减少

可能是杂质原子对VZn屏蔽引起的结果;PO2低于50%

材料中H原子数目相对较多

H原子会与晶格中的悬挂键结合

和存在同种缺陷的其它样品相比

这时能与晶格原子悬挂键湮没的正电子数目要减少很多。随着O2含量增加

VZn浓度逐渐变大

VO和Zni浓度相应减小

这些变化与光致发光谱（Photoluminescence

PL）反映的实验结果相吻合。

Abstract

Native defects in ZnO films grown by radio frequency (RF) reactive magnetron sputtering under variable oxygen fraction conditions have been investigated by using monoenergetic positrons beam technique. The results show that the same type defects dominate in these ZnO samples grown at oxygen fraction less than 70% in the proc- ess chamber; and zinc vacancies are preponderant in the ZnO films fabricated in richer oxygen environment. The concentration of zinc vacancies increases with oxygen partial fraction rising. While oxygen fraction reaches 85%

zinc vacancies that could trap positrons decrease

which suggests that impurities could shield zinc vacancies. A com- bination between hydrogen atoms and the dangling bonds in the lattice could weaken the trap of positrons under the 50% oxygen fraction condition. The concentration of zinc vacancies varies in different oxygen fraction films

which is in agreement with the conclusion of photoluminescence spectroscopy.

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