您当前的位置:
首页 >
文章列表页 >
Pulsed total dose effect test technique and damage laws study
更新时间:2021-03-12
    • Pulsed total dose effect test technique and damage laws study

    • NUCLEAR TECHNIQUES   Issue 10, (2005)
    • CLC: TN407
    • Published:01 October 2005

    移动端阅览

  • LUO Yinhong GONG Jiancheng YAO Zhibin GUO Hongxia ZHANG Fengqi LI Yonghong GUO Ning. Pulsed total dose effect test technique and damage laws study[J]. Nuclear techniques, 2005, (10): 761-765. DOI:

  •  
  •  

0

Views

315

下载量

1

CSCD

Alert me when the article has been cited
提交
Tools
Download
Export Citation
Share
Add to favorites
Add to my album

Related Articles

Total dose effect on floating gate ROMs irradiated by Co-60 γ-rays or pulsed γ-rays
Design and implement of a test system for front-end ASIC chips
The compare of total-dose irradiation effects between CMOS 4000 and 54HC devices
A testing system circuit for front-end ASIC of silicon strip detector
Study of hard X-ray dose enhancement effects for some kinds of semiconductor devices

Related Author

王圆明
张科营
姚志斌
郭红霞
张凤祁
LUO Yinhong ZHANG Fengqi GUO Hongxia YAO Zhibin ZHANG Keying WANG Yuanming
李小刚
马晓莉

Related Institution

Institute of Modern Physics,Chinese Academy of Sciences,Lanzhou 730000, China) 2
中国科学院研究生院
Xinjiang Technical Institute of Physics and Chemistry,Urumqi 830011,China) 2
新疆大学物理学院
中国科学院研究生院北京
0