A new multiple charge sensitive preamplifier developed recently is introduced in this paper. This preamplifer can provide 8CH for most number. A new design is adopted to implement this preamplifer which mainly consists of slow noise N-FET transistor and an integrated low noise

high-speed operational amplifer. The equivalent inpout noise is ≤2.2 keV at 0pF. This preamplifer features simple structure

small dimensions

fast risetime of output pulse

low noise

excellent stability. We introduced the structure and features of this preamplifier in detail in this paper.