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Investigation of defects of molecular beam epitaxial Si by slow positron beam
更新时间：2021-03-12

    • Investigation of defects of molecular beam epitaxial Si by slow positron beam

    • NUCLEAR TECHNIQUES   Issue 2, (2000)
    • CLC： O474

    • Published：01 February 2000

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  • Investigation of defects of molecular beam epitaxial Si by slow positron beam[J]. Nuclear techniques, 2000, (2). DOI：

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