The low dose rate radiation response of NPN bipolar transistors under different bias

FEI Wuxiong1; 3 LU Wu1; 2 REN Diyuan1; 2 ZHENG Yuzhan1; 3 WANG Yiyuan1; 3 CHEN Rui1; 3 WANG Zhikuang4 YANG Yonghui4 LI Maoshun1; 3 LAN Bo1; 3 CUI Jiangwei1; 3 ZHAO Yun1; 3 1

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The low dose rate radiation response of NPN bipolar transistors under different bias

更新时间：2021-03-05

- The low dose rate radiation response of NPN bipolar transistors under different bias
- NUCLEAR TECHNIQUES Vol. 33, Issue 4, (2010)
- 作者机构：
  
  1. 中国科学院新疆理化技术研究所
  2. 新疆电子信息材料与器件重点实验室
  3. 中国科学院研究生院
  4. 集成电路国家重点实验室
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN322.8
- Published：01 April 2010
- 稿件说明：
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[1]费武雄,陆妩,任迪远,郑玉展,王义元,陈睿,王志宽,杨永晖,李茂顺,兰博,崔江维,赵云.不同偏置对NPN双极晶体管的低剂量率电离辐照损伤的影响[J].核技术,2010,33(04):274-277.

FEI Wuxiong1, 3 LU Wu1, 2 REN Diyuan1, et al. The low dose rate radiation response of NPN bipolar transistors under different bias[J]. Nuclear techniques, 2010, 33(4): 274-277.
[1]费武雄,陆妩,任迪远,郑玉展,王义元,陈睿,王志宽,杨永晖,李茂顺,兰博,崔江维,赵云.不同偏置对NPN双极晶体管的低剂量率电离辐照损伤的影响[J].核技术,2010,33(04):274-277. DOI：

FEI Wuxiong1, 3 LU Wu1, 2 REN Diyuan1, et al. The low dose rate radiation response of NPN bipolar transistors under different bias[J]. Nuclear techniques, 2010, 33(4): 274-277. DOI：

摘要

对NPN双极晶体管进行了低剂量率下不同偏置条件的电离辐射实验。结果表明

不同偏置条件下的低剂量率辐射损伤具有明显差异。基-射结反向偏置时

其过剩基极电流最大

电流增益衰减最为显著。而基-射结正向偏置时

过剩基极电流和电流增益衰减都最小。讨论了出现这种结果的内在机制。

Abstract

At low dose rate

ionizing radiation response of NPN bipolar transistors at different base-emitter junction bias

i.e

negative bias

positive bias and zero bias

was investigated in this paper. Under low dose rate irradiation of up to 1 kGy by 60Co γ-rays

the NPN bipolar transistors at different bias behaved differently. An NPN bipolar transistor in irradiation with negative biased at the base-emitter junction

the excess base current and gain degradation were much larger than those of the other two bias situations

and the excess base current and gain degradation were minimal when the base-emitter junction was positively biased. Possible mechanism was discussed.

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Related Institution

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Xinjiang Key Laboratory of Electronic Information Material and Device,Xinjiang Technical Institute of Physics & Chemistry,Chinese Academy of Sciences,Urumqi 830011,China) 2

模拟集成电路国家重点实验室

Xinjiang Technical Institute of Physics and Chemistry,Xinjiang Key Laboratory of Electronic Information Materials and Devices,Chinese Academy of Sciences,Urumqi 830011,China)2

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